Junction formation by Zn(O, S) sputtering yields CIGSe‐based cells with efficiencies exceeding 18%. (28th November 2013)

• Record Type: Journal Article
• Authors: Klenk, Reiner; Steigert, Alexander; Rissom, Thorsten; Greiner, Dieter; Kaufmann, Christian A.; Unold, Thomas; Lux‐Steiner, Martha Ch.
• Is Part Of: Progress in photovoltaics. Volume 22:Number 2(2014)
• Page Start: 161
• Page End: 165
• Publication Date: 2013-11-28
• Subjects: Solar cells -- Periodicals; Photovoltaic cells -- Periodicals; Solar power plants -- Periodicals; 621.31245
• DOI: 10.1002/pip.2445
• Languages: English
• ISSNs: 1062-7995

Abstract

<abstract abstract-type="main"> <title>ABSTRACT</title> <p>In an effort to reduce the complexity and associated production costs of Cu(In, Ga)Se₂ (CIGSe)‐based solar cells, the commonly used sputtered undoped ZnO layer has been modified to eliminate the requirement for a dedicated buffer layer. After replacing the ZnO target with a mixed ZnO/ZnS target, efficient solar cells could be prepared by sputtering directly onto the as‐grown CIGSe surface. This approach has now been tested with high‐quality lab‐scale glass/Mo/CIGSe substrates. An efficiency of 18.3% has been independently confirmed without any post‐deposition annealing or light soaking. Copyright © 2013 John Wiley &amp; Sons, Ltd.</p> </abstract>