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HARVARD Citation
Wang, D. et al. (n.d.). An analytic drain current model for long‐channel undoped gate stack surrounding‐gate MOSFETs including interface fixed charges. International journal of numerical modelling. pp. 99-108. [Online].
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Wang, D. et al. (n.d.). An analytic drain current model for long‐channel undoped gate stack surrounding‐gate MOSFETs including interface fixed charges. International journal of numerical modelling. pp. 99-108. [Online].