Rapid annealing of reactively sputtered precursors for Cu2ZnSnS4 solar cells. (10th July 2012)

• Record Type: Journal Article
• Authors: Scragg, Jonathan J.; Ericson, Tove; Fontané, Xavier; Izquierdo‐Roca, Victor; Pérez‐Rodríguez, Alejandro; Kubart, Tomas; Edoff, Marika; Platzer‐Björkman, Charlotte
• Is Part Of: Progress in photovoltaics. Volume 22:Number 1(2014)
• Page Start: 10
• Page End: 17
• Publication Date: 2012-07-10
• Subjects: Solar cells -- Periodicals; Photovoltaic cells -- Periodicals; Solar power plants -- Periodicals; 621.31245
• DOI: 10.1002/pip.2265
• Languages: English
• ISSNs: 1062-7995

Abstract

<abstract abstract-type="main"> <title>ABSTRACT</title> <p>Cu₂ZnSnS₄ (CZTS) is a promising thin‐film absorber material that presents some interesting challenges in fabrication when compared with Cu(In, Ga)Se₂. We introduce a two‐step process for fabrication of CZTS films, involving reactive sputtering of a Cu‐Zn‐Sn‐S precursor followed by rapid annealing. X‐ray diffraction and Raman measurements of the sputtered precursor suggest that it is in a disordered, metastable CZTS phase, similar to the high‐temperature cubic modification reported for CZTS. A few minutes of annealing at 550 °C are sufficient to produce crystalline CZTS films with grain sizes in the micrometer range. The first reported device using this approach has an AM1.5 efficiency of 4.6%, with <italic>J</italic>_sc and <italic>V</italic>_oc both appearing to be limited by interface recombination. Copyright © 2012 John Wiley &amp; Sons, Ltd.</p> </abstract>