Recent progress of SiC power devices and applications. Issue 5 (31st July 2013)

• Record Type: Journal Article
• Authors: Li, Lijuan; Li, Canbing; Cao, Yijia; Wang, Feng
• Is Part Of: IEEJ transactions on electrical and electronic engineering. Volume 8:Issue 5(2013)
• Page Start: 515
• Page End: 521
• Publication Date: 2013-07-31
• Subjects: Electrical engineering -- Periodicals; Electronics -- Periodicals; 621.3
• DOI: 10.1002/tee.21888
• Languages: English
• ISSNs: 1931-4973

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Devices made of the wide‐bandgap semiconductor silicon carbide are capable of not only providing excellent performance for higher voltages, higher switching frequencies, higher junction temperatures, and higher power than silicon devices, but also leading to drastic reduction in system complexity, volume, and weight, as well as higher efficiency and better reliability of power electronics systems. The newly emerged technology has made rapid progress during the past decade, and we can expect even greater advantages and potential for energy savings and emission reduction in the coming years. In this paper, the research on SiC material and device technologies, the benefits, and some remaining issues are discussed. Recent progress (since 2007) in applications such as DC–DC, AC–DC, DC–AC, and AC–AC converters is discussed. Also, future applications and perspectives are analyzed. © 2013 Institute of Electrical Engineers of Japan. Published by John Wiley &amp; Sons, Inc.</p> </abstract>