Solution‐processed Cu(In, Ga)(S, Se)2 absorber yielding a 15.2% efficient solar cell. (30th January 2012)

• Record Type: Journal Article
• Authors: Todorov, Teodor K.; Gunawan, Oki; Gokmen, Tayfun; Mitzi, David B.
• Is Part Of: Progress in photovoltaics. Volume 21:Number 1(2013)
• Page Start: 82
• Page End: 87
• Publication Date: 2012-01-30
• Subjects: Solar cells -- Periodicals; Photovoltaic cells -- Periodicals; Solar power plants -- Periodicals; 621.31245
• DOI: 10.1002/pip.1253
• Languages: English
• ISSNs: 1062-7995

Abstract

<abstract abstract-type="main"> <title>ABSTRACT</title> <p>The remarkable potential for inexpensive upscale of solution processing technologies is expected to enable chalcogenide‐based photovoltaic systems to become more widely adopted to meet worldwide energy needs. Here, we report a thin‐film solar cell with solution‐processed Cu(In, Ga)(S, Se)₂ (CIGS) absorber. The power conversion efficiency of 15.2% is the highest published value for a pure solution deposition technique for any photovoltaic absorber material and is on par with the best nonvacuum‐processed CIGS devices. We compare the performance of our cell with a world champion vacuum‐deposited CIGS cell and perform detailed characterization, such as biased quantum efficiency, temperature‐dependent electrical measurement, time‐resolved photoluminescence, and capacitance spectroscopy. Copyright © 2012 John Wiley &amp; Sons, Ltd.</p> </abstract>