Growth of Highly Conformal TiCx Films Using Atomic Layer Deposition Technique. Issue 4 (22nd March 2013)

• Record Type: Journal Article
• Authors: Hong, Tae Eun; Choi, Sang‐Kyung; Kim, Soo‐Hyun; Cheon, Taehoon; Sunichi, H.
• Is Part Of: Journal of the American Ceramic Society. Volume 96:Issue 4(2013)
• Page Start: 1060
• Page End: 1062
• Publication Date: 2013-03-22
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.12289
• Languages: English
• ISSNs: 0002-7820

Abstract

<abstract abstract-type="main" xml:lang="en" id="jace12289-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>TiC_{<italic>x</italic>} films were deposited by atomic layer deposition using tetrakis–neopentyl–titanium [Ti(CH₂C(CH₃)₃)₄] and H₂ plasma as the precursor and reactant, respectively. The growth of the rock‐salt–structured TiC_{<italic>x</italic>} films was confirmed by X‐ray and electron diffraction. The C‐to‐Ti ratio determined by Rutherford backscattering spectrometry was ~0.52 and the film resistivity was as low as ~600 μΩ cm with a high density of 4.41 g/cm³. The step coverage was approximately 90% over the trench structure (top opening diameter of 25 nm) with an aspect ratio of ~4.5.</p> </abstract>