Insights into the yield enhancement and ion emission process in metal‐assisted SIMS. (5th June 2012)

• Record Type: Journal Article
• Authors: Nittler, L.; Delcorte, A.; Bertrand, P.; Migeon, H.‐N.
• Is Part Of: Surface and interface analysis. Volume 45:Number 1(2013:Jan.)
• Page Start: 18
• Page End: 21
• Publication Date: 2012-06-05
• Subjects: Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.5045
• Languages: English
• ISSNs: 0142-2421

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Although nowadays the use of cluster ion sources seems to enhance the secondary ion emission for nearly all materials, the technique of metal‐assisted SIMS can still give further insights in the secondary ion emission process. In this study, the metallization for static SIMS analysis was performed <italic>in situ</italic>. The combination of a detailed morphology study by SEM, TEM and the secondary yield enhancements in time‐of‐flight SIMS allows to develop a model explaining the secondary yield enhancement in metal‐assisted SIMS. Copyright © 2012 John Wiley &amp; Sons, Ltd.</p> </abstract>