Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon. (25th July 2012)

• Record Type: Journal Article
• Authors: Demenev, E.; Giubertoni, D.; Reading, M. A.; Bailey, P.; Noakes, T. C. Q.; Bersani, M.; van den, J. A.
• Is Part Of: Surface and interface analysis. Volume 45:Number 1(2013:Jan.)
• Page Start: 413
• Page End: 416
• Publication Date: 2012-07-25
• Subjects: Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.5136
• Languages: English
• ISSNs: 0142-2421

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS) have been applied to the characterization of ultra‐shallow distributions of arsenic in silicon obtained by ion implantation. A previously developed quantitative model for the correction of results obtained by ultra low energy SIMS was tested on different types of samples. The model deals with the different sputtering regimes in SiO₂ and Si and corrects the analysis behaviour at the SiO₂/Si interface. Model results were compared with MEIS which yields depth profiles that are more accurate and can be quantified from first principles. The obtained model was tested on samples with or without a pre‐amorphization implant step prior to As implantation and subsequently annealed at 550 °C in a partially oxidizing atmosphere. Results show excellent agreement on As peak position and shape; however, MEIS detects differences between profiles of preamorphised and non‐preamorphised samples whereas SIMS profiles of these samples are almost identical. Copyright © 2012 John Wiley &amp; Sons, Ltd.</p> </abstract>