Oxygen accumulation effect for depth profiling of thin‐multilayered sample using low‐energy oxygen ion beam. (17th July 2012)

• Record Type: Journal Article
• Authors: Nishinomiya, Suguru; Kubota, Naoyoshi; Hayashi, Shun‐ichi; Takenaka, Hisataka
• Is Part Of: Surface and interface analysis. Volume 45:Number 1(2013:Jan.)
• Page Start: 107
• Page End: 110
• Publication Date: 2012-07-17
• Subjects: Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.5107
• Languages: English
• ISSNs: 0142-2421

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <p>This paper tries to discuss the change of the secondary ion yield, sputtered neutrals yield and the change of the internal energy of sputtered neutrals with O₂⁺ beam bombardment. For this discussion, we researched the influence of the accumulation effect with O₂⁺ beam bombardment by using the secondary ion mass spectrometry (SIMS) and the resonance‐enhanced multiphoton ionization sputtered neutral mass spectrometry (REMPI‐SNMS). In order to reveal the influence of different oxygen implantation depth, we used O₂⁺ beam of 0.5, 1.0 and 2.0 keV and compared the amounts of secondary ions and sputtered neutrals for the nano‐multilayered samples. The results of the SIMS and SNMS measurement indicated that the accumulation effect depends on irradiation energy of O₂⁺ beam because the surface oxygen concentration, which greatly affects secondary ion yield and sputtering neutrals yield, changed for different irradiation energies. In conclusion, it was found that the secondary ion yield, the sputtered neutrals yield and internal energy of sputtered neutrals were significantly changed by oxidation of the matrix elements. Copyright © 2012 John Wiley &amp; Sons, Ltd.</p> </abstract>