High Tunability in (111)‐Oriented Relaxor Pb0.8Ba0.2ZrO3 Thin Film with Antiferroelectric and Ferroelectric Two‐Phase Coexistence. Issue 6 (22nd March 2013)

• Record Type: Journal Article
• Authors: Peng, Biaolin; Fan, Huiqing; Zhang, Qi; Feteira, A.
• Is Part Of: Journal of the American Ceramic Society. Volume 96:Issue 6(2013)
• Page Start: 1852
• Page End: 1856
• Publication Date: 2013-03-22
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.12269
• Languages: English
• ISSNs: 0002-7820

Abstract

<abstract abstract-type="main" xml:lang="en" id="jace12269-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Using a sol‐gel method Pb_0.8Ba_0.2ZrO₃ (PBZ) thin film with a thickness of ~320 nm was fabricated on Pt(111)/TiO_{<italic>x</italic>}/SiO₂/Si substrate. The analysis results of XRD, SEM, and dielectric properties revealed that this thin film is a (111)‐oriented nano‐scaled antiferroelectric and ferroelectric two‐phase coexisted relaxor. Calculations of dielectric tunability (η) and figure‐of‐merit (FOM) at room temperature display a maximum value of 75% at <italic>E</italic> = 560 kV/cm and ~236, respectively. High‐temperature stability (η<italic> </italic>&gt; 75% and FOM &gt; 230 at 560 kV/cm in the range from 300 to 380 K) and high breakdown dielectric strength (leakage current &lt; 1 nA at 598 kV/cm) make the PBZ thin film to be an attractive material for applications of tunable devices.</p> </abstract>