Laser processing of Al2O3/a‐SiCx:H stacks: a feasible solution for the rear surface of high‐efficiency p‐type c‐Si solar cells. (26th April 2012)

• Record Type: Journal Article
• Authors: Martín, I.; Ortega, P.; Colina, M.; Orpella, A.; López, G.; Alcubilla, R.
• Is Part Of: Progress in photovoltaics. Volume 21:Number 5(2013)
• Page Start: 1171
• Page End: 1175
• Publication Date: 2012-04-26
• Subjects: Solar cells -- Periodicals; Photovoltaic cells -- Periodicals; Solar power plants -- Periodicals; 621.31245
• DOI: 10.1002/pip.2207
• Languages: English
• ISSNs: 1062-7995

Abstract

<abstract abstract-type="main"> <title>Abstract</title> <p>We explore the potential of laser processing aluminium oxide (Al₂O₃)/amorphous silicon carbide (a‐SiC<italic>_x</italic>:H) stacks to be used at the rear surface of p‐type crystalline silicon (c‐Si) solar cells. For this stack, excellent quality surface passivation is measured with effective surface recombination velocities as low as 2 cm/s. By means of an infrared laser, the dielectric film is locally opened. Simultaneously, part of the aluminium in the Al₂O₃ film is introduced into the c‐Si, creating p+ regions that allow ohmic contacts with low‐surface recombination velocities. At optimum pitch, high‐efficiency solar cells are achievable for substrates of 0.5–2.5 Ω cm. Copyright © 2012 John Wiley &amp; Sons, Ltd.</p> </abstract>