Bi(Zn2/3Nb1/3)O3–(K0.5Na0.5)NbO3 High‐Temperature Lead‐FreeFerroelectric Ceramics with Low Capacitance Variation in a Broad Temperature Usage Range. Issue 3 (12th December 2012)

• Record Type: Journal Article
• Authors: Cheng, Hualei; Du, Hongliang; Zhou, Wancheng; Zhu, Dongmei; Luo, Fa; Xu, Boxi; Zhang, S.
• Is Part Of: Journal of the American Ceramic Society. Volume 96:Issue 3(2013)
• Page Start: 833
• Page End: 837
• Publication Date: 2012-12-12
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.12118
• Languages: English
• ISSNs: 0002-7820

Abstract

<abstract abstract-type="main" xml:lang="en" id="jace12118-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The <italic>x</italic>Bi(Zn_2/3Nb_1/3)O₃–(1−<italic>x</italic>)(K_0.5Na_0.5)NbO₃ (abbreviated as <italic>x</italic>BZN–(1−<italic>x</italic>)KNN) ceramics have been synthesized using the conventional solid‐state sintering method. The phase structure, dielectric properties and "relaxorlike" behavior of the ceramics were investigated. The 0.03BZN–0.97KNN ceramics show a broad and stable permittivity maximum near 2000 and lower dielectric loss (≤5%) at a broad temperature usage range (100°C–400°C) and the capacitance variation (ΔC/C_150°C) is maintained smaller than ±15%. The 0.03BZN–0.97KNN ceramics only possess the diffuse phase transition and no frequency dispersion of dielectric permittivity, which indicates that 0.03BZN–0.97KNN ceramics is a high temperature "relaxorlike" ferroelectric ceramics. These results indicate that 0.03BZN–0.97KNN ceramics are excellent promising candidates for preparing high‐temperature multilayer ceramics capacitors.</p> </abstract>