Color‐Tunable Up‐Conversion Emission and Infrared Photoluminescence and Dielectric Relaxation of Er3+/Yb3+ Co‐Doped Bi2Ti2O7 Pyrochlore Thin Films. Issue 4 (12th February 2013)

• Record Type: Journal Article
• Authors: Zhao, Jianxiong; Zhang, Qinyuan; Qin, Ni; Li, Baojun; Bao, Dinghua; Srivastava, A.
• Is Part Of: Journal of the American Ceramic Society. Volume 96:Issue 4(2013)
• Page Start: 1214
• Page End: 1219
• Publication Date: 2013-02-12
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.12187
• Languages: English
• ISSNs: 0002-7820

Abstract

<abstract abstract-type="main" xml:lang="en" id="jace12187-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The color‐tunable up‐conversion (UC) emission and infrared photoluminescence and dielectric relaxation of Er<sup>3+</sup>/Yb<sup>3+</sup> co‐doped Bi<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> pyrochlore thin films prepared by a chemical solution deposition method have been investigated. The pyrochlore phase structure of Bi<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> can be stabilized by Er<sup>3+</sup>/Yb<sup>3+</sup> co‐doping. Intense color‐tunable UC emission and infrared photoluminescence can be detected on the thin films excited by a 980 nm diode laser. Two UC emission bands centered at 548 and 660 nm in the spectra can be assigned to <sup>2</sup>H<sub>11/2</sub>, <sup>4</sup>S<sub>3/2</sub> → <sup>4</sup>I<sub>15/2</sub> and <sup>4</sup>F<sub>9/2</sub> → <sup>4</sup>I<sub>15/2</sub> transitions of Er<sup>3+</sup> ions, respectively. A Stokes infrared emission centered at 1530 nm is due to <sup>4</sup>I<sub>13/2</sub> → <sup>4</sup>I<sub>15/2</sub> transition of Er<sup>3+</sup> ions. The dependence of UC emission intensity on pumping power indicates that the UC emission of the thin films is a two‐photon process. The thin films also exhibit a relatively high dielectric constant and a low dissipation factor as well as a good bias voltage stability. Temperature‐ and frequency‐dependent dielectric relaxation has been confirmed. This study suggests that Er<sup>3+</sup>/Yb<sup>3+</sup> co‐doped Bi<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> thin films can be applied to new multifunctional photoluminescence dielectric thin‐film devices.</p> </abstract>