Device circuit co-design issues in FETs. (2023)

• Record Type: Book
• Further Information: Note: Edited by Shubham Tayal, Billel Smaani, Shiromani Balmukund Rahi, Samir Labiod and Zeinab Ramezani.
• Editors: Tayal, Shubham; Smaani, Billel; Rahi, Shiromani Balmukund; Labiod, Samir, 1981-; Ramezani, Zeinab
• Contents: 1. Modeling for CMOS Circuit Design. 2. Conventional CMOS Circuit Design. 3. Compact modeling of junctionless gate-all-around MOSFET for circuit simulation: scope and challenges 4. Novel gate-overlap tunnel FETs for superior analog, digital, and ternary logic circuit applications. 5. Phase transition materials for low-power electronics. 6. Impact of total ionizing dose effect on SOI-FinFET with spacer engineering. 7. Scope and challenges with nanosheet FET-based circuit design. 8. Scope with TFET-based circuit and system design. 9. An overview of FinFET based capacitorless 1T-DRAM. 10. Literature review of the SRAM circuit design challenges. 11. Challenges and future scope of gate-all-around (GAA) transistors: Physical insights of device-circuit interactions.
• Edition: 1st
• Publisher Details: Boca Raton : CRC Press
• Publication Date: 2023
• Extent: 1 online resource (262 pages), illustrations (black and white)
• Subjects: 621.3815284; Field-effect transistors; Electronic circuit design; Semiconductors
• Languages: English
• ISBNs: 9781000926446; 9781000926422
• Related ISBNs: 9781032414256
• Notes: Note: Includes bibliographical references and index.; Note: Description based on CIP data; resource not viewed.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.