Practical terahertz electronics. devices and applications /: devices and applications. Solid-state devices and vacuum tubes : Volume 1, ([2021])

• Record Type: Book
• Other Titles: Solid-state devices and vacuum tubes
• Further Information: Note: Vinod Kumar Khanna.
• Authors: Khanna, Vinod Kumar, 1952-
• Other Names: Institute of Physics (Great Britain), publisher.
• Contents: Part I. Solid-state electronic devices. 1. Terahertz electromagnetic waves -- 1.1. What are terahertz waves? -- 1.2. The electromagnetic waves -- 1.3. Subdivisions of electromagnetic waves according to frequencies : the electromagnetic spectrum -- 1.4. Location of terahertz gap in the international standard band designations -- 1.5. Terahertz electronics -- 1.6. The practical perspective of electronics -- 1.7. Moving from conventional to terahertz electronics -- 1.8. Peculiarities of the terahertz gap -- 1.9. Unique advantages of terahertz gap frequencies -- 1.10. Organizational plan of the book -- 1.11. Discussion and conclusions 2. Schottky barrier, metal-insulator-metal, self-switching and geometric diodes -- 2.1. Schottky diode principle and switching action -- 2.2. Current-voltage equation of a non-ideal Schottky-barrier diode (SBD) -- 2.3. Components of the traditional equivalent circuit of a Schottky-barrier diode -- 2.4. Cut-off frequency of the circular-contact SBD -- 2.5. Consideration of skin effect for series resistance calculation -- 2.6. Range of applicability of traditional SBD model -- 2.7. Extended model of SBD -- 2.8. Schottky diodes with terahertz operational frequencies -- 2.9. Non-PN junction diodes -- 2.10. Discussion and conclusions 3. Resonant tunneling diodes -- 3.1. Resonant tunneling diode working and high-frequency capability -- 3.2. Simplest equivalent circuit model of resonant tunneling diode -- 3.3. Maximum output power conveyed to the load resistor RL -- 3.4. Small-signal transit-time equivalent circuit model of RTD -- 3.5. Physics-based small-signal equivalent circuit model -- 3.6. Terahertz resonant tunneling diodes -- 3.7. Discussion and conclusions 4. Avalanche transit-time and transferred-electron diodes -- 4.1. Mechanisms of creation of negative resistance -- 4.2. Frequency and power capabilities of IMPATT diode -- 4.3. Diode structure and dynamic negative resistance behavior -- 4.4. Terahertz GaAs IMPATT diodes -- 4.5. Transferred-electron diode -- 4.6. Physics of Gunn diode operation -- 4.7. Terahertz planar Gunn diodes -- 4.8. Discussion and conclusions 5. Heterojunction bipolar transistors -- 5.1. Capability of heterojunction bipolar transistor to work at high frequencies -- 5.2. Gain definitions -- 5.3. Frequency response of the common-emitter transistor amplifier -- 5.4. Figures of merit (FOMs) for high-frequency bipolar transistors -- 5.5. Correlation of terms in cut-off frequency equation with components of equivalent circuit of the bipolar transistor -- 5.6. DHBT IC technologies -- 5.7. Discussion and conclusions 6. Metal-oxide semiconductor field-effect transistors -- 6.1. MOSFET construction and operation -- 6.2. Short-circuit current gain -- 6.3. MOSFET capacitances -- 6.4. Cut-off frequency -- 6.5. Circumventing the MOSFET speed limitations due to long electron transit time -- 6.6. Terahertz MOSFET detectors -- 6.7. Discussion and conclusions 7. High-electron-mobility transistors -- 7.1. MESFET and HEMT basics -- 7.2. HEMT operation at high frequencies -- 7.3. Built-in potential and capacitances -- 7.4. Analysis of an HEMT structure -- 7.5. InP terahertz HEMT technology -- 7.6. Discussion and conclusions Part II. Vacuum electronic devices. 8. Travelling wave tubes and backward wave oscillators -- 8.1. General constructional features of TWTs and BWOs -- 8.2. Closer examination of working of TWT/BWO -- 8.3. Difference between a travelling wave tube and backward wave oscillator from phase/group velocity viewpoint -- 8.4. Electron bunching and amplification of the signal in a TWT -- 8.5. Applications of TWTs -- 8.6. Terahertz TWTs -- 8.7. Operation of the backward wave oscillator -- 8.8. Advantages of the backward wave oscillator -- 8.9. Limitations of the backward wave oscillator -- 8.10. Frequency/power levels achieved with backward wave oscillators -- 8.11. Discussion and conclusions 9. Gyrotrons -- 9.1. Difficulties faced with classical electron tubes in the terahertz range -- 9.2. Periodic beam devices versus periodic circuit devices -- 9.3. Advantages offered by gyrotron for terahertz generation -- 9.4. Components and constructional details of gyrotron -- 9.5. Cyclotron frequency -- 9.6. Cyclotron resonance maser (CRM) -- 9.7. Explanation of the bunching mechanism of a gyrotron with a simplified three-electron model -- 9.8. Dispersion diagram of a gyrotron -- 9.9. Gyrotron research status -- 9.10. Discussion and conclusions 10. Free electron lasers -- 10.1. Free electron laser versus conventional laser -- 10.2. Main components of a free electron laser -- 10.3. Equation of motion of the electron in the undulator -- 10.4. Operating modes of the free electron laser -- 10.5. Discussion and conclusions.
• Publisher Details: Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing
• Publication Date: 2021
• Extent: 1 online resource (1 PDF (various pagings), illustrations (some color)
• Subjects: 621.381; Terahertz technology; Submillimeter waves; Solid state electronics; Vacuum-tubes; Electronic devices & materials; Materials
• Languages: English
• ISBNs: 9780750331715; 0750331712; 9780750331708; 0750331704
• Related ISBNs: 9780750331692; 9780750331722
• Notes: Note: Includes bibliographical references.; Note: Title from PDF title page (viewed on January 18, 2022).
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.