Advanced indium arsenide-based HEMT architectures for terahertz applications. (2021)

• Record Type: Book
• Further Information: Note: Edited by N. Mohankumar.
• Editors: Mohankumar, N
• Contents: Chapter 1: Introduction to III-V materials and HEMT Structure ; Sanhita Manna Chapter 2: III-V Hetero Structure Devices for Ultra Low, High Power and High Breakdown Applications; D.Godwinraj Chapter 3: III-V Hetero Structure Devices for High Frequency Applications ; R. Saravana Kumar Chapter 4: Overview of THz Applications ; T. Nagarjuna Chapter 5: Device and Simulation Framework of InAs HEMTs ; V. Mahesh Chapter 6: Single Gate (SG)InAs Based HEMTs Architecture for THz Applications ; M. Arun Kumar Chapter 7: Effect of Gate Scaling and Composite Channel in InAsHEMT; C. Kamalanathan Chapter 8: Double Gate (DG) InAs Based HEMT Architecture for THz Applications ; R. Poorna Chandran Chapter 9: Influence of Dual Channel and Drain Side Recess Length in Double Gate InAs HEMTs; Y. Vamshidhar Chapter 10: Noise Analysis in Dual Quantum Well InAs Based Double Gate (DG) - HEMT ; Girish Shankar Mishra
• Edition: 1st
• Publisher Details: Boca Raton : CRC Press
• Publication Date: 2021
• Extent: 1 online resource, illustrations (black and white)
• Subjects: 621.3815284; Modulation-doped field-effect transistors; Indium arsenide; Semiconductors; Terahertz technology
• Languages: English
• ISBNs: 9781000454567; 9781000454550; 9781003093428
• Related ISBNs: 9780367554149
• Notes: Note: Description based on CIP data; resource not viewed.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.