High-k materials in multi-gate FET devices. (2021)

• Record Type: Book
• Further Information: Note: Edited by Shubham Tayal.
• Editors: Tayal, Shubham
• Contents: Chapter 1 Introduction to Multi-Gate FET Devices Chapter 2 High-k Gate Dielectrics and Metal Gate Stack Technology for Advance Semiconductor Devices: An Overview Chapter 3 Influence of High-k Material in Gate Engineering and in Multi-Gate Field Effect Transistor Devices Chapter 4 Trap Charges in High-k and Stacked Dielectric Chapter 5 Impact of High-k Dielectric on the Gate-Induced Drain Leakage of Multi-Gate FETs Chapter 6 Advanced FET Design Using High-k Gate Dielectric and Characterization for Low-Power VLSI Chapter 7 Simulation and Analysis of Gate Stack DG MOSFET with Application of High-k Dielectric Using Visual TCAD Chapter 8 Novel Architecture in Gate All-Around (GAA) MOSFET with High-k Dielectric for Biomolecule Detection Chapter 9 Asymmetric Junctionless Transistor: A SRAM Performance Study Chapter 10 Performability Analysis of High-k Dielectric-Based Advanced MOSFET in Lower Technology Nodes Index
• Edition: 1st
• Publisher Details: Boca Raton : CRC Press
• Publication Date: 2021
• Extent: 1 online resource, illustrations (black and white)
• Subjects: 621.381528; Field-effect transistors; Dielectrics
• Languages: English
• ISBNs: 9781000438819; 9781000438789; 9781003121589
• Related ISBNs: 9780367639686
• Notes: Note: Includes bibliographical references and index.; Note: Description based on CIP data; resource not viewed.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.