Magnetic memory technology : spin-transfer-torque MRAM and beyond /: spin-transfer-torque MRAM and beyond. (2020)

• Record Type: Book
• Further Information: Note: Denny D. Tang, Chi-Feng Pai.
• Authors: Tang, Denny D; Pai, Chi-Feng
• Contents: 1. Basic electromagnetism (25 pages) 1.1 Introduction 1.2 Magnetic force, pole, field, dipole 1.3 Magnetic dipole moment, torque and energy 1.4 Magnetic flux and magnetic induction 1.5 Ampere’s circuital law, Biot-Savart law and magnetic field from magnetic material 1.5.1 Ampere’s Law 1.5.2 Biot=Savart’s Law 1.5.3 Magnetic field from magnetic material 1.6 Equations, cgs-SI unit conversion tables 2 Magnetism and magnetic materials (51 pages) 2.1 Introduction 2.2 Origin of magnetization 2.2.1 From Ampère to Einstein 2.2.2 Precession 2.2.3 Electron spin 2.2.4 Spin-orbit interaction 2.2.5 Hund’s rules 2.3 Classification of magnetisms 2.3.1 Diamagnetism 2.3.2 Paramagnetism 2.3.3 Ferromagnetism 2.3.4 Antiferromagnetism 2.3.5 Ferrimagnetism 2.4 Exchange interactions 2.4.1 Direct exchange 2.4.2 Indirect exchange: Superexchange 2.4.3 Indirect exchange: RKKY interaction 2.5 Magnetization in magnetic metals and oxides 2.5.1 Slater-Pauling curve 2.5.2 Rigid band model 2.5.3 Iron oxides and iron garnets 2.6 Phenomenology of magnetic anisotropy 2.6.1 Uniaxial anisotropy 2.6.2 Cubic anisotropy 2.7 2Origins of magnetic anisotropy 2.7.1 Shape anisotropy 2.7.2 Magnetocrystalline anisotropy (MCA) 2.7.3 Perpendicular magnetic anisotropy (PMA) 2.8 Magnetic domain and domain walls 2.8.1 Domain wall 2.8.2 Single domain and superparamagnetism 3 Magnetic thin films 3.1 Introduction 3.2 Magnetic thin film growth 3.2.1 Sputter deposition 3.2.2 Molecular beam epitaxy (MBE) 3.3 Magnetic thin film characterization 3.3.1 Vibrating-sample magnetometer (VSM) 3.3.2 Magneto-optical Kerr effect (MOKE) 4 Magnetoresistance effects (14 pages) 4.1 Introduction 4.2 Anisotropic magnetoresistance (AMR) 4.3 Giant magnetoresistance (GMR) 4.4 Tunneling magnetoresistance (TMR) and magnetic tunnel junction (MTJ) 4.5 Contemporary MTJ designs and characterization 5 Magnetization switching and Field MRAMs (12 pages text + Figs) 5.1 Introduction 5.2 Magnetization reversible rotation and irreversible switching under external field 5.2.1 Full film and patterned device [homework] 5.2.2 Magnetization rotation and switching under a field in easy axis direction 5.2.3 Magnetization rotation and switching Under two orthogonal applied fields 5.2.4 Magnetization behavior of a Synthetic Anti-Ferromagnetic (SAF) stack 5.3 Field MRAMs 5.3.1 MTJ of Field MRAM 5.3.2 Half select bit disturbance issue 5.4 Applications references 6 Spin current and spin dynamics (17 pages) 6.1 Introduction to Hall effects 6.1.1 Ordinary Hall effect 6.1.2 Anomalous Hall effect and spin Hall effect 6.2 Spin current 6.2.1 Electro spin polarization in NM/FM/NM film stack 6.2.2 Non-local spin valve: Spin current injection, diffusion and inverse spin Hall effect 6.2.3 Generalized carrier and spin current draft-diffusion equation 6.3 Spin dynamics 6.3.1 Landau-Lifshitz and Landau-Lifshitz-Gilbert dynamics equation of motion 6.3.2 Ferromagnetic resonance 6.3.3 Spin pumping and effective damping in FM/NM film stack 6.3.4 FM/NM/FM coupling through spin current 6.4 Interaction between polarized conduction electron and local magnetization 6.4.1 Electron spin torque transfer to local magnetization 6.4.2 Macrospin model 6.4.3 Spin torque transfer in spin valve 6.4.3.1 Switching threshold current density 6.4.3.2 Switching time 6.4.4 Spin-torque transfer in magnetic tunnel junction 6.4.5 Spin-torque ferromagnetic resonance and torkance 6.5 Spin current interaction with domain wall 6.5.1 LLG description of domain wall motion under spin current 6.5.2 Threshold current density 7 Spin-torque-transfer (STT) MRAM engineering (46 pages) 7.1 Introduction 7.2 Thermal stability energy and switching energy 7.3 STT switching properties 7.3.1 Switching probability and wrote error rate (WER) 7.3.2 Switching current in precession regime 7.3.3 Switching delay o a STT-MRAM cell 7.3.4 Read disturb rate 7.3.5 Switching under a magnetic field – phase diagram 7.3.6 MTJ switching abnormality 7.3.6.1 Magnetic back hopping 7.3.6.2 Bifurcation switching (Ballooning in WER) 7.3.6.3 Domain mediated magnetic reversal 7.4 The integrity of MTJ tunnel barrier 7.4.1 Write current stress 7.4.2 MgO degradation model 7.5 Data retention 7.5.1 Energy barrier extraction based on bit switching probability 7.5.2 Energy barrier extraction based on aiding field 7.5.3 Energy barrier extraction with retention bake at chip level 7.5.4 Data retention at chip level 7.6 The cell design consideration and scaling 7.6.1 MRAM bit cell and array 7.6.2 CMOS options 7.6.3 Cell switching efficiency 7.6.4 The cell design considerations 7.6.4.1 Write current and cell size 7.6.4.2 Read access performance 7.6.4.3 READ and WRITE margin 7.6.4.4 Stray field control for perpendicular MTJ 7.6.4.5 Suppression of stochastic switching time variation ideas 7.6.5 The scaling of MTJ for memory 7.6.5.1 In-plane MTJ 7.6.5.2 Out-of-plane (perpendicular) MTJ 7.7 MRAM cell SPICE model 7.7.1 Introduction 7.7.2 MTJ SPICE model embedded with Macrospin calculator 7.8 Test chip and chip level weak bit screening methodology 7.8.1 READ margin bits 7.8.2 WRITE margin bits 7.8.3 Weak retention bits 7.8.4 Low endurance bits 8 Advanced switching MRAM modes 8.1 Introduction 8.2 Current Induced-Domain-wall-motion (CIDM) memory 8.2.1 Single-bit cell 8.2.2 Multi-bit cell: Racetrack 8.3 Spin-orbit Torque (SOT) Memory
• Edition: 1st
• Publisher Details: Hoboken : Wiley-IEEE Press
• Publication Date: 2020
• Extent: 1 online resource
• Subjects: 621.39763; Magnetic memory (Computers); Spintronics; Nonvolatile random-access memory
• Languages: English
• ISBNs: 9781119562283; 9781119562221
• Related ISBNs: 9781119562238
• Notes: Note: Description based on CIP data; resource not viewed.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
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