BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 2. Test method for bipolar degradation by body diode operating (1st April 2020)

Record Type:
Book
Title:
BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 2. Test method for bipolar degradation by body diode operating (1st April 2020)
Main Title:
BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors.
Authors:
British Standards Institution,
Publisher Details:
London : British Standards Institution
Publication Date:
2020
Extent:
1 online resource (11 pages)
Subjects:
602.1841
Electronic equipment and components
Semiconductor devices
Semiconductors
Metal oxide semiconductors
Testing methods
Languages:
English
ISSNs:
3040-6234
Access Rights:
Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
Access Usage:
Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.
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Physical Locations:
British Library HMNTS - ELD.DS.562204
Ingest File:
03_190.xml