Ferroelectric-gate field effect transistor memories : device physics and applications /: device physics and applications. (2020)

• Record Type: Book
• Further Information: Note: Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors.
• Other Names: Park, Byung-Eun; Ishiwara, Hiroshi, 1945-; Okuyama, Masanori, 1946-; Sakai, Shigeki; Yoon, Sung-Min
• Contents: Table of contents Ⅰ Introduction 1 Features, Principles and Developments of Ferroelectric-gate Field Effect Transistors - Prof. M. Okuyama Ⅱ Practical Characteristics of Inorganic Ferroelectric-gate FETs : Si-Based Ferroelectric-gate Field Effect Transistors 2 Development of High-Endurance and Long-Retention FeFETs of Pt/CaySr1−yBi2Ta2O9/(HfO2)x(Al2O3)1−x/Si Gate Stacks - Mitsue Takahashi and Shigeki Sakai 3 Downsizing of high-endurance and long-retention Pt/CaySr1−yBi2Ta2O9/(HfO2)x(Al2O3)1−x/Si FeFETs - Mitsue Takahashi and Shigeki Sakai 4 Nonvolatile field-effect transistors using ferroelectric doped HfO2 films - Uwe Schroeder, Stefan Slesazeck, Halid Mulaosmanovic and Thomas Mikolajick 5 Switching in nanoscale hafnium oxide based ferroelectric transistor - Halid Mulaosmanovic, Uwe Schroeder, Thomas Mikolajick and Stefan Slesazeck III Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors 6 Oxide-channel ferroelectric-gate thin film transistors with nonvolatile memory function - Eisuke Tokumitsu 7 ZnO/Pb(Zr, Ti)O3 gate structure Ferroelectric FETs - Yukihiro Kaneko 8 Novel ferroelectric gate field-effect transistors (FeFETs); controlled polarization-type FeFETs - Norifumi Fujimura and Takeshi Yoshimura Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors 9 Non-volatile Ferroelectric Memory Transistors Using PVDF, P(VDF-TrFE) and Blended PVDF/P(VDF-TrFE) Thin films - Dae-Hee Han and Byung-Eun Park 10 Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/Si structure Ferrorlrctric-gate FETs - Yoshihisa Fujisaki V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors 11 P(VDF-TrFE) and P(VDF-TeFE)/organic semiconductor structure ferroelectric-gate FET memories -Takeshi Kanashima and Masanori Okuyama 12 Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(vinylidene fluoride trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel -Sung-Min Yoon VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates 13 Mechanically Flexible Non-volatile Field Effect Transistor Memories with Ferroelectric Polymers -Richard H. Kim and Cheolmin Park 14 Paper Transistors with Organic Ferroelectric P(VDF-TrFE) Thin Films Using a Solution Processing Method - Dae-Hee Han and Byung-Eun Park 15 Non-volatile Organic Ferroelectric field-effect transistors fabricated on Flexible Substrates - Dae-Hee Han and Byung-Eun Park Ⅶ Applications and Future Prospects 16 Novel applications to NAND flash memory circuits -Shigeki Sakai and Mitsue Takahashi 17 Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: a Material's Point of View - Park Min Hyuk Park and Cheol Seong Hwang 18 Polymorphism of hafnia-based ferroelectrics for ferroelectric field-effect transistors - Min Hyuk Park 19 Adaptive-Learning Synaptic Devices Using Ferroelectric-Gate Field-Effect Transistors for Neuromorphic Applications -Sung-Min Yoon and Hiroshi Ishiwara 20 FeFETs for neuromorphic systems - Halid Mulaosmanovic, Thomas Mikolajick and Stefan Slesazeck 21 Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors -Eisuke Tokumitsu and Tatsuya Shimoda.
• Edition: 2nd ed
• Publisher Details: Singapore : Springer
• Publication Date: 2020
• Extent: 1 online resource (421 pages)
• Subjects: 621.3815284; Field-effect transistors; Ferroelectric thin films; Ferroelectric thin films; Field-effect transistors; Electronic books; Electronic books
• Languages: English
• ISBNs: 9789811512124; 9811512124
• Related ISBNs: 9789811512117
• Notes: Note: Print version record.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.