Nanoscale redox reaction at metal/oxide interface : a case study on Schottky contact and ReRAM /: a case study on Schottky contact and ReRAM. (2020)

• Record Type: Book
• Further Information: Note: Takahiro Nagata.
• Authors: Nagata, Takahiro
• Contents: General introduction -- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO -- Surface passivation effect on Schottky contact formation of oxide semiconductors -- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure -- Switching control of oxide-based resistive random access memory by valence state control of oxide -- Combinatorial thin film synthesis for new nanoelectronics materials -- General summary.
• Publisher Details: Tokyo : Springer
• Publication Date: 2020
• Copyright Date: 2020
• Extent: 1 online resource (89 pages)
• Subjects: 541/.393; Oxidation-reduction reaction; Oxidation-reduction reaction
• Languages: English
• ISBNs: 9784431548508
• Related ISBNs: 9784431548492
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.