Introduction to crystal growth and characterization. (©2014)

• Record Type: Book
• Further Information: Note: Klaus-Werner Benz ; Wolfgang Neumann ; with contribution by Anna Mogilatenko.
• Other Names: Benz, Klaus-Werner; Neumann, Wolfgang
• Contents: Introduction to Crystal Growth and Characterization -- Contents -- Preface -- Acknowledgments -- Chapter 1 Fundamentals of Crystalline Materials -- 1.1 Crystalline State -- 1.2 Fundamentals of Geometrical Crystallography -- 1.2.1 Crystal Lattices -- 1.2.2 Crystal Axes Systems, Crystal Systems, and Crystal Families -- 1.2.3 Crystal Faces and Zones -- 1.2.4 Indexing in the Hexagonal Crystal Family -- 1.3 Morphological Symmetry of Crystals -- 1.3.1 Crystallographic Point Groups -- 1.3.2 Some Basic Facts of Group Theory -- 1.4 Structural Symmetry -- 1.4.1 Crystal Lattices, Motifs, and Crystal Structures -- 1.4.1.1 Bravais Lattices -- 1.4.1.2 The Reciprocal Lattice -- 1.4.1.3 Lattice Transformations -- 1.4.2 Crystallographic Space Groups -- 1.4.2.1 General Remarks -- 1.4.2.2 The International Tables for Crystallography -- The Reference Book for the Representation of Space Group Symmetries -- 1.4.2.3 Mathematical Description of the Space Group Symmetry -- 1.4.3 Generalized Crystallographic Symmetry -- 1.5 Crystal Structures -- 1.5.1 Sphere Packings -- 1.5.2 Selected Examples of Inorganic Structure Types -- 1.5.2.1 Polymorphism and Polytypism -- 1.5.3 Selected Examples of Molecular Crystals -- 1.5.4 Symmetry Relations between Crystal Structures -- 1.6 Crystallographic Databases and Crystallographic Computer Programs -- Appendix: Supplementary Material S1 Special Crystal Forms of Cubic Crystal Classes -- References -- Chapter 2 Basics of Growth Mechanism and Solidification -- 2.1 Nucleation Processes -- 2.1.1 Homogeneous Nucleation -- 2.1.2 Heterogeneous Nucleation -- 2.1.3 Metastable Zone Regime -- 2.1.4 Equilibrium Shape of Crystals -- 2.2 Kinetic Processes and Growth Mechanism -- 2.2.1 Molecular Kinetic Theory of Crystal Growth -- 2.2.2 Interfaces and Roughening of Surfaces. 2.2.3 Vapor-Liquid-Solid (VLS) Mechanism -- 2.2.4 Crystal Growth from Ambient Phases on Rough Surfaces: Vapor Phase, Solution, and Melt Media -- 2.2.5 Crystal Growth on Flat Surfaces -- 2.3 Phase Diagrams and Principles of Segregation -- 2.3.1 Phase Diagrams with a Continuous Miscibility in the Solid and Liquid Phases -- 2.3.2 Segregation and Segregation Coefficients -- 2.3.3 Constitutional Supercooling and Morphological Stability -- 2.4 Principles of Flow Regimes in Growth Melts -- 2.4.1 Buoyancy Convection -- 2.4.2 Marangoni Convection -- References -- Chapter 3 Growth Techniques in Correlation with Related Growth Mechanism -- 3.1 Overview on Main Growth Techniques -- 3.2 Principles of Melt Growth Techniques -- 3.2.1 The Czochralski Crystal Growth Process -- 3.2.2 Growth Method after Bridgman -- 3.2.3 The Float Zone Crystal Growth Process -- 3.2.4 Bulk Crystal Growth from Metallic Solutions -- 3.2.4.1 Traveling Solvent Method (TSM) -- 3.2.4.2 Traveling Heater Method (THM) -- 3.2.4.3 The Solute, Synthesis, Diffusion Method (SSD) -- 3.3 Bulk Crystal Growth of II-VI Compounds from the Vapor -- 3.3.1 Crystal Growth of CdTe by a Sublimation Traveling Heater Method, STHM, in Closed Ampoules -- 3.3.2 Crystal Growth of CdTe by the Markov Method in Semiclosed Ampoules -- 3.4 Epitaxial Growth Techniques -- 3.4.1 Liquid Phase Epitaxy (LPE) -- 3.4.2 Vapor Phase Epitaxy (VPE) -- 3.5 Supplementary Material: Principles of Verneuil Technique, Growth from High and Low Temperature, Nonmetallic Solutions -- 3.5.1 Verneuil Technique -- 3.5.2 Growth from High Temperature Solutions (Flux Growth) -- 3.5.3 Growth from Low Temperature Solutions (Aqueous Solutions) -- References -- Chapter 4 Characterization of Crystals -- 4.1 Crystal Defects -- 4.1.1 Zero-Dimensional Defects -- 4.1.2 One-Dimensional Defects. 4.1.3 Two-Dimensional Defects (Planar Defects) -- 4.1.3.1 Grain Boundaries -- 4.1.3.2 Stacking Faults -- 4.1.3.3 Antiphase Boundaries -- 4.1.3.4 Twins -- 4.1.3.5 Domain Boundaries -- 4.1.3.6 Crystal Surfaces -- 4.1.4 Three-Dimensional defects -- 4.1.4.1 Inclusions -- 4.1.4.2 Precipitates -- 4.1.4.3 Voids -- 4.2 Crystal Quality -- 4.2.1 Criteria of Crystal Quality -- 4.2.2 Crystal Quality and Application -- 4.3 Selected Methods of Crystal Characterization -- 4.3.1 Etching of Crystals -- 4.3.2 X-Ray Topography -- 4.3.3 Electron Microscopy -- 4.3.3.1 Scanning Electron Microscopy -- 4.3.3.2 Transmission Electron Microscopy -- 4.4 Materials Engineering by Correlation of Crystal Growth and Characterization -- 4.4.1 Epitaxial Growth of GaN on LiAlO2 Substrates -- References -- Index -- EULA.
• Publisher Details: Hoboken : Wiley
• Publication Date: 2014
• Copyright Date: 2014
• Extent: 1 online resource, illustrations (some color)
• Subjects: 548.5; Crystal growth; Crystallography; SCIENCE -- Physics -- Crystallography; Crystal growth; Crystallography; Electronic books
• Languages: English
• ISBNs: 9783527689248; 3527689249; 9783527684366; 3527684360; 9783527684342; 3527684344; 9783527318407; 3527318402; 9783527684359; 3527684352
• Notes: Note: Includes bibliographical references and index.; Note: Print version record.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.