Investigation on SiGe selective epitaxy for source and drain engineering in 22 nm CMOS technology node and beyond. (2020)
- Record Type:
- Book
- Title:
- Investigation on SiGe selective epitaxy for source and drain engineering in 22 nm CMOS technology node and beyond. (2020)
- Main Title:
- Investigation on SiGe selective epitaxy for source and drain engineering in 22 nm CMOS technology node and beyond
- Further Information:
- Note: Guilei Wang.
- Other Names:
- Wang, Guilei
- Contents:
- Introduction.- Strain technology of Si-based materials.- SiGe Epitaxial Growth and material characterization.- SiGe Source and Drain Integration and transistor performance investigation.- Pattern Dependency behavior of SiGe Selective Epitaxy.- Summary and final words.
- Publisher Details:
- Singapore : Springer
- Publication Date:
- 2020
- Extent:
- 1 online resource
- Subjects:
- 548/.5
Epitaxy
Metal oxide semiconductors, Complementary -- Materials
Epitaxy
Electronic books - Languages:
- English
- ISBNs:
- 9789811500466
9811500460 - Related ISBNs:
- 9789811500459
9811500452 - Notes:
- Note: Includes bibliographical references.
- Access Rights:
- Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
- Access Usage:
- Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library HMNTS - ELD.DS.458519
- Ingest File:
- 02_598.xml