Variation-aware advanced CMOS devices and SRAM. ([2016])

• Record Type: Book
• Further Information: Note: Changhwan Shin.
• Authors: Shin, Changhwan
• Contents: 1. Introduction: Barriers Preventing CMOS Device Technology from Moving Forward -- 2. Line Edge Roughness (LER) -- 3. Random Dopant Fluctuation (RDF) -- 4. Work Function Variation (WFV) -- 5. Tri-Gate MOSFET -- 6. Quasi-Planar Trigate (QPT) Bulk MOSFET -- 7. Tunnel FET (TFET) -- 8. Applications in Static Random Access Memory (SRAM).
• Publisher Details: Dordrecht : Springer
• Publication Date: 2016
• Copyright Date: 2016
• Extent: 1 online resource (140 pages), illustrations
• Subjects: 621.3841/34; Metal oxide semiconductors, Complementary; Random access memory; TECHNOLOGY & ENGINEERING -- Mechanical; Metal oxide semiconductors, Complementary; Random access memory; Electronic books
• Languages: English
• ISBNs: 9789401775977; 9401775974
• Related ISBNs: 9789401775953; 9401775958
• Notes: Note: Includes bibliographical references.; Note: Print version record.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.