Nanoliquid Processes for Electronic Devices : Developments of Inorganic Functional Liquid Materials and Their Processing /: Developments of Inorganic Functional Liquid Materials and Their Processing. (2019)

• Record Type: Book
• Further Information: Note: Tatsuya Shimoda.
• Authors: Shimoda, Tatsuya
• Contents: Part I Introduction to liquid process Chapter 1. Liquid process 1-1 Liquid and its formability 1-2 Categories of liquid process 1-2-1 First step: Conversion way from liquid to solid 1-2-2 Second step: Direct forming process Part II Silicon-based materials Chapter 2. Guide to silicon-based materials Chapter 3. Liquid silicon 3-1 CPS 3-1-1 Hydrosilanes and CPS 3-1-2 Structures of a CPS molecule 3-1-3 Electronic structure of isolated CPS molecule 3-1-4 Interaction between CPS molecules 3-2 Silicon ink 3-2-1 Silicon ink from CPS 3-2-2 Polymer structure in silicon ink 3-3-3 Doped silicon inks Chapter 4. Thin film formation by coating 4-1 Coating process and molecular forces 4-2 The origin of molecular forces 4-2-1 Theory of van der Waals free energy 4-2-2 Measurement of refractive index n 4-2-3 Molecular forces of CPS and silicon compounds 4-3 Coating of Si ink 4-3-1 General remarks on Si ink coating 4-3-2 Observations of liquid films 4-3-3 Hamaker constant and coating property 4-4 Conversion from polysilane to amorphous Si by pyrolysis 4-4-1 Film appearance during pyrolysis and TG/DTA analysis of Si ink 4-4-2 Raman scattering analysis 4-4-3 FT-IR and SIMS analyses 4-4-4 Properties of amorphous films Chapter 5. Liquid vapor deposition using liquid silicon (LVD) 5-1 Formation of i, n and p type silicon film by LVD 5-1-1 LVD method and experiment 5-1-2 CPS deposition process 5-1-3 Film properties 5-1-4 Conclusion 5-2 High-quality amorphous silicon film with LVD 5-2-1 New equipment for LVD 5-2-2 Film quality with processing temperature 5-2-3 Film quality with CPS supply speed 5-2-4 Electronic properties of a-Si:H films 5-2-5 Oxygen contamination in a-Si:H film 5-2-6 Summary Chapter 6. Liquid silicon family materials (1) -- SiO2, CoSi2 and Al from liquid Si -- 6-1 SiO2 fabrication from liquid silicon 6-1-1 Forming SiO2 films from liquid silicon material 6-1-2 The sole solution-processed SiO2 film for TFTs 6-1-3 Multi use of solution-processed SiO2 films for TFTs 6-1-4 Conclusion 6-2 CoSi2 fabrication from liquid silicon 6-2-1 Metal silicide from solution 6-2-2 Synthesis of cobalt silicide ink 6-2-3 Formation of CoSi2 films 6-2-4 TEM observation 6-2-5 Comparison of this process with the conventional ones 6-2-6 More detailed analyses 6-2-7 Conclusions 6-3 Al fabrication via solution process 6-3-1 Triethylamine alane as a precursor of metal Al 6-3-2 Deposition process and reaction 6-3-3 Analysis of film structure and Al growth manner 6-3-4 Selective deposition of Al 6-3-5 Conclusion Chapter 7. Liquid silicon family materials (2) -- SiC ink and SiC film from liquid Si -- 7-1 SiC fabrication via liquid process 7-1-1 Preparation and characterization of SiC precursor polymer 7-1-2 a-SiC film formation and analyses of films 7-1-3 Polymer structure 7-1-4 Polymer-to-ceramic conversion 7-1-5 Conclusion 7-2 Correlation of Si/C stoichiometry between SiC ink and a-SiC film 7-2-1 Polymer and film preparation 7-2-2 Correlation between PSH and a-SiC 7-2-3 Structural properties of an a-SiC film 7-2-4 Optical and electrical properties of an a-SiC film 7-2-5 Conclusion 7-3 n-type a-SiC by coating 7-3-1 Polymer and film preparation and their analyses 7-3-2 Polymer analysis 7-3-3 Thin-film formation 7-3-4 Effect of carbon content on film 7-3-5 Effect of phosphorous concentration on film 7-3-6 Conclusion 7-4 p-type a-SiC via LVD method 7-4-1 SiC-ink preparation and film deposition 7-4-2 Ink analysis 7-4-3 Film analysis 7-4-4 Discussion 7-4-5 Conclusion Chapter 8. Nano pattern formation using liquid silicon 8-1 Area selective deposition of silicon family materials 8-1-1 Area selective deposition of silicon using the difference of molecular force 8-1-2 Selective deposition using the reactive difference 8-2 Beam assisted deposition of silicon 8-2-1 Free writing of silicon by FIB-CVD and advantage of CPS for a source material 8-2-2 Experimental 8-2-3 Deposition of silicon patterns 8-2-4 Characterization of the deposited patterns 8-2-5 Summary 8-3 Direct imprinting of silicon using liquid silicon 8-3-1 Nano-imprinting and silicon 8-3-2 Experimental section 8-3-3 Imprinted patterns with Mold 1 8-3-4 Influence of baking temperature on imprinting in Mold 2 8-3-5 Raman and FTIR analyses 8-3-6 Solid-phase crystallization of Si nano-patterns 8-3-7 Discussion 8-3-8 Conclusion Chapter 9. Development of solar cells using liquid silicon 9-1 Thin film solar cells by coating 9-1-1 Solution preparation and film formation 9-1-2 Characteristics of coated films and their improvement by hydrogen radical treatment 9-1-3 Fabrication of solar cells and their properties 9-1-4 Conclusion 9-2 Thin film solar cells by LVD 9-2-1 Solar cell fabrication using LVD 9-2-2 Solar cell fabrication using the improved LVD 9-2-3 Conclusion 9-3 Application of liquid silicon for HBC type solar cells 9-3-1 Experimental procedure 9-3-2 Thermal stability of LVD a-Si passivation films 9-3-3 Storage stability of c-Si wafers passivated with LVD a-Si films 9-3-4 Feature of LVD a-Si passivation films and advantage of LVD method 9-3-5 Conclusion Chapter 10. Development of thin film transistors using liquid silicon 10-1 Poly-Si thin film transistor (TFT) 10-1-1 Preparation of liquid silicon 10-1-2 Poly-Si TFT 10-1-3 Inkjet printing of a channel 10-1-4 Conclusion 10-1-5 Experimental methods 10-2 Single-grain Si-TFT 10-2-1 Forming single grains from liquid Si 10-2-2 Fabrication of single-grain TFTs 10-2-3 Single-grain TFTs on flexible substrates 10-2-4 Conclusion 10-3 TFT on paper 10-3-1 Poly-Si film from polysilane 10-3-2 TFT fabrication on paper 10-3-3 Properties of TFT on paper 10-3-4 Further improving as a conclusion 10-3-5 Experimental method Part III Oxide-based materials Chapter11. Guide to Oxide-based materials Chapter 12. Improvement of solid through improved solutions and gels (1) -- Utilization of Reduction agent and reduced atmosphere PZT -- 12-1 Low temperature process of PZT bulk 12-1-1 Introduction and experimental 12-1-2 X-ray diffraction, TEM and XPS 12-1-3 XAFS 12-1-4 Thermal analysis 12-1-5 Discussion 12-1-6 Conclusion 12-1-7 Experimental detail 12-2 Low temperature process of PZT thin film 12-2-1 Introduction 12-2-2 Low temperature process of PZT thin film using reduced atmosphere 12-2-3 Process optimization 12-2-4 PZT film properties 12-2-5 Conclusion 12-2-6 Experimental methods 12-3 Ru and RuO thin film 12-3-1 Introduction 12-3-2 Thermal behaviors and structure of the precursor 12-3-3 Effect of amine content 12-3-4 Effects of amine structure 12-3-5 Properties of the prepared Ru0 and RuO2 thin films 12-3-6 Conclusion 12-3-7 Experimental methods 12-4 Low temperature processed RuO2 by green laser annealing 12-4-1 Introduction 12-4-2 Green laser irradiation to RuO2 precursor films 12-4-3 Resistivity of the GLA annealed films 12-4-4 Conclusion 12-4-5 Experimental methods Chapter 13. Improvement of solid through improved solutions and gels (2) – The other methods -- 13-1Improvement of insulator property of LaZrO by amelioration of solution 13-1-1Introduction 13-1-2 Properties of Films Prepared at Temperatures between 400 °C and 600 °C 13-1-3 TG/DTA analysis. 13-1-4 Mass analysis. 13-1-5 High energy XRD analysis. 13-1-6 XAFS analysis. 13-1-7 Analysis of elemental composition for the annealed films. 13-1-8 Summary of the above analyses. 13-1-9 Conclusions 13-1-10 Experimental methods 13-2 Combustion synthesized ITO 13-2-1 SCS-ITO solutions and thin-film formation 13-2-2 Solution-processed TFTs using SCS-ITO as S&D electrodes 13-3-3 Conclusions Chapter 14. Direct imprinting of gel (nano-Rheology Printing) 14-1 nano-Rheology Printing (n-RP) of ITO 14-1-1 Introduction to nano-Rheology Printing and its feasibility on ITO 14-1-2 Analysis of the gel material 14-1-3 Changes in the gel film during nano-Rheology Printing 14-1-4 Feature of the nano-Rheology Printing 14-1-5 Conclusion 14-1-6 Experimental details 14-2 Evaluating ITO gels via cohesive energy 14-2-1 Preparation of ITO solution and thin films 14-2-2 Conventional methods for evaluating the state of a gel 14-2-3 New methods for evaluating cohesive energy of a gel 14-2-4 Analytical results using conventional methods 14-2-5 Evaluated cohesive energies of gels 14-2-6 Conclusion 14-3 Origin of the thermal plasticity of ZrO gels 14-3-1 Introduction 14-3-2 Thermal plasticity property and rheology printing for ZrO gels 14-3-3 Structure of ZrO gels 14-3-4 Origin of thermal plasticity of Zr-gels 14-3-5 Conclusion 14-3-6 Experimental methods 14-4 nano-sized patterns of RuLaO by n-RP 14-4-1 Conversion from solutions to solids 14-4-2 Properties of nano-Rheology Printing 14-4-3 Analysis of gels and solutions 14-4-4 n-RP mechanism of Ru-La gel 14-4-5 Conclusion 14-4-6 Experimental methods Chapter 15. Novel materials proper to liquid process 15-1 High dielectric constant BiNbO material (1) -- Bi:Nb=1:1 – 15-1-1 BiNbO materials for ceramics capacitors 15-1-2 Electrical properties of a new BiNbO material 15-1-3 Improvement of solution for a standard process of the BNO films 15-1-4 Electric properties of the films from the improved solution 15-1-5 Pyrolysis of the improved solutions and gels 15-1-6 Crystalline identification by XRD and HRTEM 15-1-7 Crystallization pathway of solution-processed BNO 15-1-8 Summary 15-1-9 Experimental details 15-2 High dielectric constant BiNbO material (2) -- Nb-rich composition -- 15-2-1 Preparation of BNO precursor solution 15-2-2 Analysis of equilibrium phases appeared in the film from N50 15-2-3 Relation of the relative dielectric constant and XRD pattern with Nb content 15-2-4 Thermal analysis of N50, N60, and N67 solutions 15-2-5 Relations of the relative dielectric constant and tan δ with the annealing temperature 15-2-6 Conclusions 15-3 New p-type semiconductors 15-3-1 Introduction 15-3-2 Experimental 15-3-3 Ln-Ru(Ir)-O 15-3-4 Bi(Pb)-Ru(Ir)-O 15-3-5 Summary Chapter 16. Thin film oxide-transistor by liquid process (1) -- FGT :Ferroelectric Gate Thin Film Transistor -- 16-1 Pt
• Publisher Details: Singapore : Springer
• Publication Date: 2019
• Copyright Date: 2019
• Extent: 1 online resource (590 pages)
• Subjects: Materials science; Surfaces (Physics); Chemistry, Physical organic; Electronics; Industrial engineering; Science -- Chemistry -- Physical & Theoretical; Technology & Engineering -- Electronics -- General; Technology & Engineering -- Electronics -- Semiconductors; Technology & Engineering -- Industrial Engineering; Physical chemistry; Electronics engineering; Semi-conductors & super-conductors; Production engineering; Technology & Engineering -- Material Science; Materials science
• Languages: English
• ISBNs: 9789811329531
• Related ISBNs: 9789811329524
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