Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect. ([2018])
- Record Type:
- Book
- Title:
- Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect. ([2018])
- Main Title:
- Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect
- Further Information:
- Note: Jie Cheng.
- Authors:
- Cheng, Jie
- Contents:
- Supervisor's Foreword; Preface; Acknowledgements; Contents; Abbreviations; 1 Introduction; 1.1 Development of Ultra-Large Scale Integrated Circuit; 1.1.1 Sub-14 Nm Technology Node; 1.1.2 The Application of New Materials for Interconnects; 1.2 Ru as Novel Diffusion Barrier; 1.2.1 Novel Barrier Materials; 1.2.2 Properties of Ru; 1.2.3 Preparation of Ru as Barrier Film; 1.3 Chemical Mechanical Polishing (CMP); 1.3.1 Introduction of CMP Technology; 1.3.2 CMP of BEOL; 1.3.3 Challenges for CMP in Sub-14 Nm Technology Node; 1.4 CMP of Ru; 1.4.1 Requirements of Ru CMP; 1.4.2 Advances of Ru CMP. 1.4.3 Existing Problems in the CMP of Ru1.5 Main Content of the Thesis; References; 2 Material Removal Mechanism of Cu in KIO4-Based Slurry; 2.1 Experimental; 2.1.1 Static Etch Experiments; 2.1.2 Characterization of Surface Film; 2.1.3 Nano-Scratch Tests; 2.1.4 CMP-Electrochemical Experiments; 2.1.5 Chemical Mechanical Polishing Experiments; 2.2 Analysis of Cu Surface Chemistry; 2.2.1 Thermodynamic Parameters of Electrochemical Reactions; 2.2.2 Characterization of Corrosion Products on Cu; 2.3 Mechanical Properties of Cu Surface Film; 2.3.1 Surface Morphology. 2.3.2 Corrosion-Enhanced Mechanical Abrasion2.4 Chemical Corrosion of Cu; 2.4.1 Static Etching of Cu; 2.4.2 Mechanical Abrasion-Enhanced Chemical Corrosion of Cu; 2.5 Material Removal Mechanism of Cu; 2.6 Conclusions; References; 3 Material Removal Mechanism of Ru in KIO4-Based Slurry; 3.1 Experimental; 3.1.1 Sample Preparations; 3.1.2Supervisor's Foreword; Preface; Acknowledgements; Contents; Abbreviations; 1 Introduction; 1.1 Development of Ultra-Large Scale Integrated Circuit; 1.1.1 Sub-14 Nm Technology Node; 1.1.2 The Application of New Materials for Interconnects; 1.2 Ru as Novel Diffusion Barrier; 1.2.1 Novel Barrier Materials; 1.2.2 Properties of Ru; 1.2.3 Preparation of Ru as Barrier Film; 1.3 Chemical Mechanical Polishing (CMP); 1.3.1 Introduction of CMP Technology; 1.3.2 CMP of BEOL; 1.3.3 Challenges for CMP in Sub-14 Nm Technology Node; 1.4 CMP of Ru; 1.4.1 Requirements of Ru CMP; 1.4.2 Advances of Ru CMP. 1.4.3 Existing Problems in the CMP of Ru1.5 Main Content of the Thesis; References; 2 Material Removal Mechanism of Cu in KIO4-Based Slurry; 2.1 Experimental; 2.1.1 Static Etch Experiments; 2.1.2 Characterization of Surface Film; 2.1.3 Nano-Scratch Tests; 2.1.4 CMP-Electrochemical Experiments; 2.1.5 Chemical Mechanical Polishing Experiments; 2.2 Analysis of Cu Surface Chemistry; 2.2.1 Thermodynamic Parameters of Electrochemical Reactions; 2.2.2 Characterization of Corrosion Products on Cu; 2.3 Mechanical Properties of Cu Surface Film; 2.3.1 Surface Morphology. 2.3.2 Corrosion-Enhanced Mechanical Abrasion2.4 Chemical Corrosion of Cu; 2.4.1 Static Etching of Cu; 2.4.2 Mechanical Abrasion-Enhanced Chemical Corrosion of Cu; 2.5 Material Removal Mechanism of Cu; 2.6 Conclusions; References; 3 Material Removal Mechanism of Ru in KIO4-Based Slurry; 3.1 Experimental; 3.1.1 Sample Preparations; 3.1.2 Electrochemical Measurement; 3.1.3 Analysis of Surface Chemistry in Micro-Region; 3.1.4 CMP-Electrochemical Experiments; 3.2 Ru Surface Chemistry Analysis; 3.2.1 Thermodynamic Parameters of Electrochemical Reactions. 3.2.2 Characterization of Corrosion Products on Ru3.3 Thickness of the Passive Film on Ru Surface; 3.4 The Corrosion Properties of Ru; 3.4.1 Passivation Properties of Ru; 3.4.2 The Corrosion Kinetics of Ru; 3.5 The CMP Mechanism of Ru; 3.6 Conclusions; References; 4 Tribocorrosion Investigations of Cu/Ru Interconnect Structure During CMP; 4.1 Experimental; 4.1.1 Tribocorrosion Experiments; 4.1.2 The CMP-Electrochemical Experiments; 4.2 Tribocorrosion Properties of Cu in KIO4-Based Solution; 4.2.1 Comparison Between the Wear Track and Unworn Surface; 4.2.2 The Electrochemical Signals. 4.3 Abrasion-Accelerated Corrosion of Cu During CMP4.4 Tribocorrosion Properties of Ru in KIO4-Based Solution; 4.5 Abrasion-Accelerated Corrosion of Ru During CMP; 4.6 Conclusions; References; 5 Micro-galvanic Corrosion of Cu/Ru Couple in KIO4 Solution; 5.1 Experimental; 5.1.1 Sample Preparation; 5.1.2 Confocal Raman Microscopy Analysis; 5.1.3 KFM Mapping and In-situ AFM Measurements; 5.1.4 Electrochemical Experiments; 5.2 Corrosion Tendency of the Metal Components; 5.3 Corrosion Products Analysis; 5.4 Electrochemical Behavior of the Cu/Ru Couple; 5.4.1 Corrosion Tendency in KIO4 Solution. … (more)
- Publisher Details:
- Singapore : Springer
- Publication Date:
- 2018
- Copyright Date:
- 2018
- Extent:
- 1 online resource
- Subjects:
- 621.3815/2
Chemical mechanical planarization
Ruthenium
TECHNOLOGY & ENGINEERING -- Mechanical
Chemical mechanical planarization
Ruthenium
Electronics and Microelectronics, Instrumentation
Electronic books - Languages:
- English
- ISBNs:
- 9789811061653
9811061653 - Related ISBNs:
- 9789811061646
9811061645 - Notes:
- Note: Includes bibliographical references.
Note: Online resource; title from PDF title page (SpringerLink, viewed September 18, 2017). - Access Rights:
- Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
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- British Library HMNTS - ELD.DS.406352
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