Controlled synthesis and scanning tunneling microscopy study of graphene and graphene-based heterostructures. ([2018])

• Record Type: Book
• Further Information: Note: Mengxi Liu.
• Other Names: Liu, Mengxi
• Contents: ""Supervisorsâ#x80;#x99; Foreword""; ""Abstract""; ""Publication List""; ""Acknowledgements""; ""Contents""; ""1 Introduction""; ""1.1 The Properties of Graphene""; ""1.1.1 The Structure of Graphene""; ""1.1.2 The Band Structure of Graphene""; ""1.2 Synthesis of Graphene""; ""1.2.1 The Synthesis Methods of Graphene""; ""1.2.2 The Synthesis Methods of Bilayer Graphene""; ""1.3 Bandgap Opening of Graphene""; ""1.3.1 Physical Method""; ""1.3.2 Chemical Method""; ""1.4 Research Strategy""; ""References""; ""2 Controllable Synthesis of Graphene on Rh""; ""2.1 Experiment"" ""2.1.1 Process Engineering for Graphene Growth""""2.1.2 Factors for Graphene Segregation""; ""2.1.3 Substrate""; ""2.1.4 Experimental System""; ""2.2 Controllable Growth of Graphene on Rh Substrates""; ""2.3 The Mechanism of Graphene Growth on Rh Substrates""; ""2.4 Conclusion""; ""References""; ""3 STM Study of Twisted Bilayer Graphene""; ""3.1 Introduction to STM Study of Graphene""; ""3.1.1 The Working Principle of STM""; ""3.1.2 The Working Principle of STS""; ""3.1.3 Applications of STM/STS Technique in Graphene Research""; ""3.2 STM Study of Bilayer Graphene"" ""3.2.1 The Stacking Order of Graphene Synthesized on Rh Substrates""""3.2.2 The Linking Type of Bilayer Graphene on Rh Substrates""; ""3.3 Angle-Dependent VHSs in Twisted Bilayer Graphene""; ""3.3.1 VHSs in Twisted Bilayer Graphene""; ""3.3.2 Angle-Dependent VHSs""; ""3.4 STM/STS Study of Graphene Wrinkles""; ""3.4.1 Graphene Wrinkles on Rh Substrates""; ""3.4.2 Strain-Induced LLs on Graphene Wirnkle""; ""3.5 Conclusion""; ""References""; ""4 Controlled Synthesis of in-Plane h-BN-G Heterostructures""; ""4.1 Introduction of in-Plane h-BN-G Heterostructures"" ""4.1.1 Intriguing Properties of h-BN-G Heterostructures""""4.1.2 Synthesis of in-Plane h-BN-G Heterostructures""; ""4.2 Experiment""; ""4.2.1 UHV-STM System""; ""4.2.2 The Choice of Substrate""; ""4.3 Controlled Growth of Graphene on Ir(111)""; ""4.3.1 Growth Process of Graphene on Ir(111)""; ""4.3.2 The Controllable Growth of Graphene on Ir(111)""; ""4.3.3 Moiré Patterns of Graphene on Ir(111)""; ""4.4 Controlled Growth of h-BN on Ir(111)""; ""4.4.1 Growth Process of h-BN on Ir(111)""; ""4.4.2 Controllable Growth of h-BN on Ir(111)""; ""4.4.3 Moiré Patterns of h-BN on Ir(111)"" ""4.5 Controlled Growth of h-BN-G Heterostructures on Ir(111)""""4.6 Conclusion""; ""References""; ""5 Atomic and Electronic Structures of h-BN-G Interfaces""; ""5.1 Atomic Structure of h-BN-G Interface""; ""5.2 The Formation Mechanism of the Zigzag-Type Boundaries""; ""5.2.1 Edge Types of Submonolayer Graphene Grown on Metal Substrates""; ""5.2.2 The Formation Process of Zigzag-Type Linking Boundary""; ""5.3 Electronic Structure of h-BN-G Interface""; ""5.3.1 Research of Electronic Properties of h-BN-G Interface""; ""5.3.2 Electronic Structure of Monolayer Graphene and h-BN on Ir(111)""
• Publisher Details: Singapore : Springer
• Publication Date: 2018
• Extent: 1 online resource, color illustrations
• Subjects: 620.115; Graphene; Heterostructures; TECHNOLOGY & ENGINEERING -- Engineering (General); TECHNOLOGY & ENGINEERING -- Reference; Graphene; Heterostructures; Electronic books; Electronic books
• Languages: English
• ISBNs: 9789811051814
• Related ISBNs: 981105181X; 9789811051807; 9811051801
• Notes: Note: Includes bibliographical references.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.