Research on the radiation effects and compact model of SiGe HBT. ([2018])

• Record Type: Book
• Further Information: Note: Yabin Sun.
• Authors: Sun, Yabin
• Contents: Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion.
• Publisher Details: Singapore : Springer
• Publication Date: 2018
• Extent: 1 online resource
• Subjects: 621.3815/28; Bipolar transistors -- Effect of radiation on; Bipolar transistors -- Research; Metal oxide semiconductors, Complementary -- Effect of radiation on; TECHNOLOGY & ENGINEERING -- Mechanical; Metal oxide semiconductors, Complementary -- Effect of radiation on; Engineering; Electronics and Microelectronics, Instrumentation; Semiconductors; Optical and Electronic Materials; Electronic Circuits and Devices; Solid State Physics; Electronic books
• Languages: English
• ISBNs: 9789811046124; 9811046123
• Related ISBNs: 9789811046117; 9811046115
• Notes: Note: Includes bibliographical references at the end of each chapters and index.; Note: Online resource; title from PDF title page (EBSCO, viewed October 26, 2017).
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.