3D TCAD simulation for CMOS nanoeletronic devices. ([2018])

• Record Type: Book
• Further Information: Note: Yung-Chun Wu, Yi-Ruei Jhan.
• Authors: Wu, Yung-Chun; Jhan, Yi-Ruei
• Contents: Introduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools -- Simulation analysis of 2D MOSFET -- Simulation analysis of 3D FinFET with LG = 15 nm -- Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm -- Simulation analysis of GAA NWFET -- Simulation analysis of Junctionless FET with LG = 10 nm -- Simulation analysis of Tunnel FET -- Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm.
• Publisher Details: Singapore : Springer
• Publication Date: 2018
• Extent: 1 online resource (xiii, 330 pages), illustrations (some color)
• Subjects: 621.3815/2; Metal oxide semiconductors, Complementary -- Computer-aided design; Metal oxide semiconductors, Complementary -- Computer-aided design; Electronic books
• Languages: English
• ISBNs: 9789811030666; 9811030669; 9811030650; 9789811030659
• Related ISBNs: 9789811030659
• Notes: Note: Includes bibliographical references.; Note: Online resource; title from PDF title page (SpringerLink, viewed June 28, 2017).
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.