Defects and impurities in silicon materials : an introduction to atomic-level silicon engineering /: an introduction to atomic-level silicon engineering. (2016)

• Record Type: Book
• Further Information: Note: Yutaka Yoshida and Guido Langouche, Editors.
• Editors: (Materials scientist), Yoshida, Yutaka; (Materials scientist), Langouche, Guido
• Contents: Diffusion and point defects in silicon materials.- Density functional modeling of defects and impurities in silicon materials.- Electrical and optical defect evaluation techniques for electronic and solar grade silicon.- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt.- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells.- Oxygen precipitation in silicon.- Defect characterization by electron beam induced current and cathode luminescence methods.- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators.- Defect Engineering in silicon materials.
• Publisher Details: Tokyo : Springer
• Publication Date: 2016
• Copyright Date: 2015
• Extent: 1 online resource (487 pages)
• Subjects: 546.683; Silicon
• Languages: English
• ISBNs: 9784431558002
• Related ISBNs: 9784431557999
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.