Ferroelectricity in doped hafnium oxide : materials, properties and devices /: materials, properties and devices. (2019)

• Record Type: Book
• Further Information: Note: Edited by Uwe Schroeder, Cheol Seong Hwang, Hiroshi Funakubo.
• Editors: Schroeder, Uwe; Hwang, Cheol Seong; Funakubo, Hiroshi
• Contents: 1. Fundamentals of Ferroelectric and piezoelectric properties 2. HfO2 processes 3. Dopant screening for optimization of the ferroelectric properties 4. Electrode screening for capacitor applications 5. Phase transition 6. Switching kinetics 7. Impact of oxygen vacancies 8. Epitaxial growth of ferroelectric HfO2 9. Thickness scaling Chapter 10. Simulation/Modelling 11. Structural characterization on a nanometer scale: PFM, TEM 12. Comparison to standard ferroelectric materials 13. FE HfO2 based devices
• Publisher Details: Oxford : Woodhead Publishing
• Publication Date: 2019
• Extent: 1 online resource
• Subjects: 621.39732; Metal oxide semiconductors; Hafnium oxide; Hafnium oxide -- Electric properties; Ferroelectricity
• Languages: English
• ISBNs: 9780081024317
• Related ISBNs: 9780081024300
• Notes: Note: Description based on CIP data; resource not viewed.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.