Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor. (2018)

• Record Type: Book
• Further Information: Note: By Iraj Sadegh Amiri, Mahdiar Ghadiry.
• Authors: Amiri, Iraj Sadegh; Ghadiry, Mahdiar
• Contents: Introduction on Scaling Issues of Conventional Semiconductors -- Basic Concept of Field Effect Transistors -- Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors -- Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor -- Conclusion and Futureworks on High Voltage Application of Graphene.
• Publisher Details: Singapore : Springer Singapore Imprint: Springer
• Publication Date: 2018
• Extent: 1 online resource
• Subjects: 620.5; Engineering; Electronic circuits; Nanotechnology; Engineering; Nanotechnology and Microengineering; Electronic Circuits and Devices; Nanotechnology; Electronic books
• Languages: English
• ISBNs: 9811065500; 9789811065507
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.