Next generation spin torque memories. ([2017])

• Record Type: Book
• Further Information: Note: Brajesh Kumar Kaushik, Shivam Verma, Anant Aravind Kulkarni, Sanjay Prajapati.
• Other Names: Kaushik, Brajesh Kumar; (Writer on microelectronics), Verma, Shivam; Kulkarni, Anant Aravind; Prajapati, Sanjay
• Contents: Preface; Contents; About the Authors; 1 Emerging Memory Technologies; 1.1 Introduction; 1.2 Non-volatile Memories; 1.2.1 Phase Change Memory; 1.2.2 Resistive RAM; 1.2.3 Ferroelectric RAM; 1.2.4 Magnetoresistive RAM; 1.3 Spin Torque Based Memories; 1.3.1 Spin Transfer Torque MRAM; 1.3.2 Spin Orbit Torque MRAM; 1.3.3 Domain Wall MRAM; 1.4 Comparison of Emerging Memory Technologies; 1.5 Chapter Summary; References; 2 Next Generation 3-D Spin Transfer Torque Magneto-resistive Random Access Memories; 2.1 Overview of Conventional STT MRAM: Architecture and Operation; 2.2 Cell Size in Memories. 2.3 Next Generation 4F2 STT MRAM2.3.1 Proposed Architecture; 2.3.2 Performance Parameters and Windows; 2.3.3 Simulation Framework; 2.4 Case Study; 2.4.1 TCAD Analysis; 2.4.2 TCAD Simulation Setup; 2.4.3 Mixed-Mode Simulation Results; 2.4.4 Impact of High-k GAA Devices; 2.4.5 Impact of High-k GD on Delay; 2.5 Proposed Fabrication Methodology; 2.6 Conclusion; References; 3 Spin Orbit Torque MRAM; 3.1 Introduction; 3.2 SOT Device Structure; 3.3 SOT-MRAM Bit-Cell and Array Architectures; 3.4 SOT-MRAM Write and Read Mechanisms; 3.4.1 Concept of Simultaneous Read and Write Operations. 3.5 Compact Modeling of the SOT-MTJ Device3.5.1 Magnetization Dynamics; 3.5.2 TMR; 3.6 Design Aspects and Performance Optimization of SOT-MRAM; 3.7 Comparative Analysis of STT-MRAM and SOT-MRAM; References; 4 Multilevel Cell MRAMs; 4.1 Introduction; 4.2 Issues with Single Level Cell (SLC) STT-/SOT-MRAM; 4.3 Multilevel Cell (MLC) Configurations; 4.3.1 STT Based MLC Configurations; 4.3.2 SOT Based MLC Configurations; 4.4 Multilevel Cell (MLC) MRAM Operations; 4.4.1 MLC STT-MRAM Write and Read Operations; 4.4.2 MLC SOT-MRAM Write and Read Operation; 4.5 Modeling and Simulation of MLC MRAMs. 4.5.1 Simulations of MLC MRAMs4.6 Design Aspects and Optimization of MLC MRAMs; 4.6.1 sMLC MRAMs; 4.6.2 pMLC MRAMs; 4.7 Conclusions; References; 5 Magnetic Domain Wall Race Track Memory; 5.1 Introduction; 5.1.1 Limitations of Existing and Emerging Memory Technologies; 5.2 Fundamentals of Domain-Wall Motion in Nanowire; 5.2.1 Magnetic Domains in Magnetic Nanowire; 5.2.2 Domain-Wall Motion in Nanowire; 5.2.3 Optimization of Domain Wall Motion; 5.3 Domain Wall MRAM; 5.3.1 DW-MRAM Write and Read Operations; 5.4 Racetrack Memory; 5.4.1 Structure of Racetrack Memory; 5.4.2 Write and Read Operations. 5.5 Racetrack Memory Based Logic Implementations5.6 Chapter Summary; References.
• Publisher Details: Singapore : Springer
• Publication Date: 2017
• Extent: 1 online resource
• Subjects: 621.3; Spintronics; Nanotechnology; Microelectronics; TECHNOLOGY & ENGINEERING -- Mechanical; TECHNOLOGY & ENGINEERING -- Nanotechnology & MEMS; Microelectronics; Nanotechnology; Spintronics; Engineering; Nanotechnology and Microengineering; Electronics and Microelectronics, Instrumentation; Circuits and Systems; Electronic books
• Languages: English
• ISBNs: 9789811027208
• Related ISBNs: 981102720X; 9789811027192; 9811027196
• Notes: Note: Includes bibliographical references.; Note: Vendor-supplied metadata.
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