Device physics, modeling, technology, and analysis for silicon MESFET. ([2019])

• Record Type: Book
• Further Information: Note: Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry.
• Authors: Amiri, Iraj Sadegh, 1977-; Mohammadi, Hossein; Hosseinghadiry, Mahdiar
• Contents: Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits.- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET .- Chapter 3. Modeling of Classical SOI-MESFET.- Chapter 4. Design and modeling of triple-material gate SOI-MESFET.- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET .- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices.- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs).
• Publisher Details: Cham, Switzerland : Springer
• Publication Date: 2019
• Copyright Date: 2019
• Extent: 1 online resource
• Subjects: 621.3815284; Metal semiconductor field-effect transistors -- Mathematical models; Physics; TECHNOLOGY & ENGINEERING / Mechanical; Metal semiconductor field-effect transistors -- Mathematical models; Physics; Electronic books
• Languages: English
• ISBNs: 9783030045135; 3030045137
• Related ISBNs: 9783030045128; 3030045129
• Notes: Note: Includes bibliographical references and index.; Note: Vendor-supplied metadata.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.