Crystal growth technology : semiconductors and dielectrics /: semiconductors and dielectrics. (2011)

• Record Type: Book
• Further Information: Note: Edited by Peter Capper, Peter Rudolph.
• Other Names: Capper, Peter; Rudolph, Peter, 1945-
• Contents: Foreword. Preface. List of Contributors. Part I. Basic Concepts in Crystal Growth Technology. 1. Thermodynamics Modeling of Crystal-Growth Processes (Eberhard Buhrig, Manfred Jurisch, Jürgen Korb, and Olf Pätzold). 1.1 Introduction. 1.2 General Approach of Thermodynamic Modeling. 1.3 Crystal Growth in the System Si-C-O-Ar (Example 1). 1.4 Crystal Growth of Carbon-Doped GaAs (Example 2). 1.5 Summary and Conclusions. 2. Modeling of Vapor-Phase Growth of SiC and AIN Bulk Crystals (Roman A. Talalaev, Alexander S. Segal, Eugene V. Yakovlev, and Andrey N, Vorob’ev). 2.1 Introduction. 2.2 Model Description. 2.3 Results and Discussions. 2.4 Conclusions. 3. Advanced Technologies of Crystal Growth from Melt Using Vibrational Influence (Evgeny V. Zharikov). 3.1 Introduction. 3.2 Axial Vibrational Control in Crystal Growth. 3.3 AVC-Assisted Czochralski Method. 3.4 AVC-Assisted Bridgman Method. 3.5 AVC-Assisted Floating Zone Method. 3.6 Conclusions. Part II. Semiconductors. 4. Numerical Analysis of Selected Processes in Directional Solidification of Silicon for Photovoltaics (Koichi Kakimoto). 4.1 Introduction. 4.2 Directional Solidification Method. 4.3 Crystallization Process. 4.4 Impurity Incorporation in Crystals. 4.5 Summary. 5. Characterization and Control of Defects in VCz GaAS Crystals Grown without B2 O3 Encapsulant (Frank M. Kiessling). 5.1 Introduction. 5.2 Retrospection. 5.3 Crystal Growth without B2 O3 Encapsulant. 5.4 Inclusions, Precipitates and Dislocations. 5.5 Residual Impurities and Special Defect Studies. 5.6 Electrical and Optical Properties SI GaAs. 5.7 Boron in SC GaAs. 5.8 Outlook on TMF-VCz. 5.9 Conclusions. 6. The Growth of Semiconductor Crystals (Ge, GaAs) by the Combined Heather Magnet Technology (Peter Rudolph, Matthias Czupalla, Christiane Frank –Rotsch, Frank-Michael Kiessling and Bernd Lux). 6.1 Introduction. 6.2 Selected Fundamentals. 6.3 TMF Generation in Heater-Magnet Modules. 6.4 The HMM Design. 6.5 Numerical Modeling. 6.6 Dummy Measurements. 6.7 Growth Results under TMF. 6.8 Conclusions and Outlook. 7. Manufacturing of Bulk AIN Substrates (Oleg V. Avdeev, Tatinana Yu. Chemekova, Heikki Helava, Yuri N. Makarov, Evgenii N. Mokhov, Sergei S. Nagalyuk, M. G. Ramm, Alexander S. Segal, and Alexander I. Zhmakin). 7.1 Introduction. 7.2 Modeling. 7.3 Experiment. 7.4 Results and Discussion. 7.5 Conclusions. 8. Interactions of Dislocations During Epitaxial Growth of SiC and GaN (Jochen Friedrich, Birgit Kallinger, Patrick Berwian, Elke Meissner). 8.1 Introduction. 8.2 Classification, Nomenclature and Characterization of Dislocations in SiC and GaN. 8.3 Conversion of Basal Plane Dislocations During SiC Epitaxy. 8.4 Reduction of Dislocations During Homoepitaxy of GaN. 8.5 Conclusions. 9. Low-Temperature Growth of Ternary III-V Semiconductor Crystals from Antimonide-Based Quaternary Melts (Partha S. Dutta). 9.1 Introduction. 9.2 Crystal Growth from Quaternary Melts. 9.3 Advantages of Quaternary Melts. 9.4 Synthesis and Bulk Crystal Growth. 9.5 Conclusion. 10. Mercury Cadmium Telluride (MCT) Growth Using ACRT and LPE (Peter Capper). 10.1 Introduction. 10.2 Bridgman/ACRT Growth of MCT. 10.3 Liquid Phase Epitaxy of MCT. 11. The Use of a Platinum Tube as an Ampoule Support in the Bridgman Growth of Bulk CZT Crystals (Narayanasamy Vijayan, Verónica Carcelén, and Ernesto Diéguez). 11.1 Introduction. 11.2 The Importance of the Solid/Liquid Interface. 11.3 Approaches for Crystal Growth Using Ampoule Support. 11.4 Results and Discussions. 11.5 Conclusions. Part III. Dielectrics. 12. Modeling and Optimization of Oxide Crystal Growth (Svetlana E. Demina, Vladimir V. Kalaev, Alexander T. Kuliev, Kirill M. Mazaev, and Alexander I. Zhmakin). 12.1 Introduction. 12.2 Radiative Heat Transfer (RHT). 12.3 Numerical Model. 12.4 Results and Discussion. 12.5 Conclusions. 13. Advanced Material Development for Inertial Fusion Energy (IFE) (Kathleen Schaffers, Andrew J. Bayramian, Joseph A. Menapace, Gregory T. Rogowski, Thomas F. Saules, Christopher A. Stolz, Steve B. Sutton, John B. Tassano, Peter A. Thelin, Christopher A. Ebbers, John A. Caird, Christopher P.J. Barty, Mark A. Randles, Charles Porter, Yiting Fei, and Bruce H. T. Chai). 13.1 Introduction. 13.2 Production of Nd: phosphate Laser Glass and KDP Frenquency-Conversion Crystals. 13.3 Yb: S-FAP Crystals. 13.4 YCOB Crystals. 13.5 Advanced Material Concepts for Power-Plant Designs. 13.6 Summary. 14. Magneto-Optic Garnet Sensor Films: Preparation, Characterization, Application (Peter Görnet, Andreas Lorenz, Morris Lindner, and Hendryk Richert). 14. 1 Introduction. 14.2 Bi-Substituted Garnets. 14.3 LPE Deposition and Topological Film Properties. 14.4 Magnetic and Magneto-Optic Film Properties. 14.5 Applications. 14.6 Conclusions. 15. Growth Technology and Laser Properties of Yb-Doped Sesquioxide s (Rigo Peters, Klaus Petermann, and Günter Huber). 15.1 Introduction. 15.2 Structure and Physical Properties. 15.3 Crystal Growth. 15.4 Spectroscopic Characterization. 15.5 Laser Experiments. 15.6 Summary and Outlook. 16. Continuous Growth of Alkali-Halides: Physics and Technology (Oleg Sidletskiy). 16.1 Modern Requirements to Large Alkali-Halide Crystals. 16.2 Conditions of Steady-State Crystallization in Conventional Melt-Growth Methods and in Their Modifications. 16.3 Macrodefect Formation in AHC. 16.4 Dynamics of Thermal Conditions during Continuous Growth. 16.5 Advanced Growth-Control Algorithms. 16.6 Summary. 17. Trends in Scintillation Crystals (Alexander V. Gektin). 17.1 Introduction. 17.2 Novel Scintillation Materials. 17.3 Scintillation Detectors for Image Visualization and Growth Techniques for Scintillation Crystals. 17.4 High Spatial Resolution Scintillation Detectors. 17.5 Conclusions. Part IV. Crystal Machining. 18. Crystal Machining Using Atmospheric Pressure Plasma (Yasuhisa Sano, Kazuya Yamamura, and Kazuto Yamauchi). 18.1 Introduction. 18.2 Plasma Chemical Vaporization Machining (PCVM). 18.3 Numerically Controlled Sacrificial Oxidation. 18.4 Conclusions. Index.
• Publisher Details: Place of publication not identified : Wiley-VCH
• Publication Date: 2011
• Extent: 1 online resource (366 pages)
• Subjects: 660.284298; Crystal growth; Semiconductors -- Materials; Dielectrics
• Languages: English
• ISBNs: 9783527632893
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.