Capacitance spectroscopy of semiconductors. ([2018])

• Record Type: Book
• Further Information: Note: Edited by Jian V. Li, Giorgio Ferrari.
• Editors: Li, Jian V; Ferrari, Giorgio
• Contents: Cover; Half Title; Title Page; Copyright Page; Table of Contents; Preface; SECTION I: PHYSICS; 1: An Introduction to Capacitance Spectroscopy in Semiconductors; 1.1 Capacitance; 1.1.1 The Definitions of Capacitance; 1.1.2 Extraction of Capacitance from Equivalent Circuits; 1.2 Capacitances in Semiconductors; 1.2.1 Capacitance of an Insulator; 1.2.2 Capacitance of a Semiconductor at Equilibrium; 1.2.3 Capacitance of a Semiconductor Depleted of Carriers; 1.2.4 Capacitance of a Semiconductor with Excess Carriers; 1.2.5 Capacitance of a Semiconductor with Carrier Traps 1.3 Capacitance Spectroscopy1.3.1 Capacitance-Voltage Profiling; 1.3.2 Drive-Level Capacitance Profiling; 1.3.3 Admittance Spectroscopy; 1.3.4 Deep-Level Transient Spectroscopy; 1.4 Impedance Spectroscopy; 1.4.1 Experiment; 1.4.2 Graphical Analysis; 1.5 Summary; 2: Admittance Spectroscopy; 2.1 Principles of Admittance Spectroscopy; 2.2 Interpretation of Admittance Spectroscopy; 2.2.1 Series Resistance; 2.2.2 Defect Spectroscopy; 2.2.3 Carrier Freeze-Out; 2.2.4 Back Contact Diode; 2.2.5 Simulation; 2.3 Series Resistance; 2.4 Dielectric Relaxation; 2.5 Defect Spectroscopy 2.6 Back Contact Diode2.7 Phototransistor Model; 2.8 Discussion; 2.9 Conclusion; 3: Deep-Level Transient Spectroscopy; 3.1 Introduction; 3.2 The Principle; 3.2.1 Fourier-Transform Analysis; 3.2.2 Laplace DLTS; 3.2.3 Coupling of Defect Levels; 3.3 Carrier Capture Cross Section; 3.4 Minority Carrier Traps; 3.5 Extended Defects; 3.6 Heavily Compensated Semiconductors and Non-Uniform Doping Profile; 3.7 Anomalous Signals; 3.8 Summary; 4: Capacitance-Voltage and Drive-Level-Capacitance Profiling; 4.1 Depletion Capacitance and CV Profiling; 4.1.1 The Ideal One-Sided Diode with an Abrupt Junction 4.1.2 Influence of Series Resistance4.1.3 Influence of Interface States; 4.1.4 Capacitance in Forward Bias; 4.1.5 Metal-Insulator-Semiconductor Devices; 4.1.6 Experimental Details of CV; 4.2 Drive-Level Capacitance Profiling; 4.2.1 Theoretical Development of DLCP; 4.2.2 Experimental Details of DLCP; 4.2.3 Analyzing DLCP Data; 4.2.4 History of DLCP; 4.3 Comparing Results from Multiple Techniques; 4.3.1 Comparisons between DLCP and CV; 4.3.2 Comparisons with AS; 4.3.3 Other Quantitative Tests of DLCP; 4.4 Cautions and Opportunities for CV and DLCP; SECTION II: INSTRUMENTATION 5: Basic Techniques for Capacitance and Impedance Measurements5.1 Definitions; 5.2 Classification of Measurement Techniques; 5.3 Voltage Sensing; 5.3.1 Shunt Scheme; 5.3.2 Ratiometric Configuration; 5.3.3 Half Bridge; 5.3.4 Full Bridge; 5.4 Current Sensing; 5.4.1 Transimpedance Front-End; 5.4.2 Summary and Comparison; 5.5 Impedance Calculation; 5.5.1 Envelope Detector; 5.5.2 Synchronous Demodulation; 5.5.3 Sampling-Based Techniques; 5.6 Correction of Parasitics-Induced Inaccuracies; 5.6.1 Multi-Wire Schemes; 5.6.2 Calibration; 5.7 Other Techniques; 5.7.1 Resonant Techniques
• Publisher Details: Singapore : Pan Stanford Publishing
• Publication Date: 2018
• Copyright Date: 2018
• Extent: 1 online resource
• Subjects: 535.84; Spectrum analysis; Semiconductors; SCIENCE / Physics / Optics & Light; Semiconductors; Spectrum analysis; Electronic books
• Languages: English
• ISBNs: 9781315150130; 1315150131; 9781351368445; 1351368443; 9781351368452; 1351368451
• Related ISBNs: 9789814774543; 9814774545
• Notes: Note: Includes bibliographical references and index.; Note: Vendor-supplied metadata.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.