Sensing of non-volatile memory demystified. ([2018])

• Record Type: Book
• Further Information: Note: Swaroop Ghosh, editor.
• Editors: Ghosh, Swaroop
• Contents: Intro; Preface; Why a New Book; Unique Features; Organization and Overview of the Content; Acknowledgements; Contents; Editor and Contributors; 1 Sensing ofSpintronic Memories; 1.1 Introduction; 1.2 Magnetic Random Access Memory (MRAM); 1.2.1 Spin-Transfer Torque (STT) MRAM; 1.2.2 Spin-Orbit Torque (SOT) MRAM; 1.2.3 Multilevel MRAM; 1.3 MRAM Sensing Techniques; 1.3.1 Conventional Sense Amplifier; 1.3.2 Error-Tolerant Sense Amplifiers; 1.3.3 Self-Reference Sensing Scheme; 1.4 Conclusion; References; 2 Sensing ofResistive RAM; 2.1 Introduction 2.1.1 Advantages asMemory Cell andData Processing Unit2.1.2 Sensing Scheme Is Important forSystem Performance; 2.2 Sensing forMemory; 2.2.1 ReRAM Characteristics asaMemory Cell; 2.2.2 Read Circuitry; 2.2.3 Write Circuitry; 2.3 Sensing forComputing; 2.3.1 Neuromorphic Computing; 2.3.2 Current Amplifier; 2.3.3 IFC; 2.4 Conclusive Remarks; References; 3 Sensing inFerroelectric Memories andFlip-Flops; 3.1 Introduction; 3.2 Ferroelectric-Based Memories andLogic; 3.2.1 Ferroelectric Capacitor; 3.2.2 Ferroelectric Transistor (FEFET) 3.2.3 Ferroelectric Capacitor-Based Memory (FERAM) Topologies3.2.4 Ferroelectric Transistor (FEFET)-Based Memory Topologies; 3.2.5 Ferroelectric Capacitor-Based Non-volatile Logic Topologies; 3.2.6 Ferroelectric Transistor-Based Non-volatile Logic Topologies; 3.3 Sensing Techniques forFerroelectric Memories; 3.3.1 Sensing Techniques forFerroelectric Capacitor-Based Memories; 3.3.2 Sensing Techniques forFerroelectric Transistor-Based Memories; 3.4 Sensing Techniques forNon-volatile Ferroelectric Logic; 3.4.1 Sensing Mechanism forFerroelectric Capacitor-Based Logic 3.4.2 Sensing Mechanism forFerroelectric Transistor-Based Logic3.5 Summary; References; 4 Sensing ofPhase-Change Memory; 4.1 Introduction; 4.2 Advantages ofPCM Over Conventional Memories; 4.3 Basics ofPCM; 4.3.1 PCM Cell Description; 4.3.2 Writing toaPCM Cell; 4.3.3 Description ofRead/Write Circuitry; 4.3.4 Read/Write Operation; 4.3.5 Challenges forPCM Devices; 4.4 Sensing Schemes; 4.4.1 Voltage-Based Sensing; 4.4.2 Current-Based Sensing; 4.4.3 Comparison ofDifferent Sensing Techniques; 4.5 Sensing Issues; 4.5.1 Resistance Drift; 4.5.2 High Sensing Time; 4.5.3 Sensing Time Variation 4.5.4 Multi-level Sensing4.6 Conclusion; References; Summary; Index
• Publisher Details: Cham : Springer
• Publication Date: 2018
• Copyright Date: 2019
• Extent: 1 online resource, illustrations (some color)
• Subjects: 621.39/732; Engineering; Nonvolatile random-access memory; TECHNOLOGY & ENGINEERING / Mechanical; Nonvolatile random-access memory; Technology & Engineering -- Electronics -- Circuits -- General; Computers -- Hardware -- General; Technology & Engineering -- Electronics -- General; Circuits & components; Storage media & peripherals; Electronics engineering; Systems engineering; Memory management (Computer science); Electronics; Electronic books
• Languages: English
• ISBNs: 9783319973470; 3319973479
• Related ISBNs: 9783319973456; 3319973452
• Notes: Note: Includes bibliographical references and index.; Note: Online resource ; title from PDF title page (EBSCO, viewed August 15, 2018).
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.