Beyond-CMOS technologies for next generation computer design. (2018)
- Record Type:
- Book
- Title:
- Beyond-CMOS technologies for next generation computer design. (2018)
- Main Title:
- Beyond-CMOS technologies for next generation computer design
- Further Information:
- Note: Rasit O. Topaloglu, H.-S Philip Wong, editors.
- Editors:
- Topaloglu, Rasit O
Wong, H.-S. Philip - Contents:
- Intro; Foreword; Preface; Contents; 1 Beyond-Silicon Devices: Considerations for Circuits and Architectures; 1.1 Introduction; 1.2 Carbon Nanotube Field-Effect Transistors; 1.3 Circuit-Level Implications; 1.3.1 Overcoming Mis-Positioned CNTs; 1.3.2 Overcoming Metallic CNTs; 1.3.3 CNT-Specific Variations; 1.4 Architectural-Level Implications; 1.5 Outlook; References; 2 Functionality-Enhanced Devices: From Transistors to Circuit-Level Opportunities; 2.1 Introduction; 2.2 Multiple-Independent-Gate Silicon Nanowires Transistors; 2.2.1 Polarity Control; 2.2.2 Subthreshold Slope Control 2.2.3 Threshold Voltage Control2.3 Novel Materials for Polarity-Controllable Devices; 2.3.1 Carbon Nanotubes; 2.3.2 Graphene; 2.3.3 Two-Dimensional Transition Metal Dichalcogenides; 2.4 Circuit-Level Opportunities; 2.5 Summary; References; 3 Heterogeneous Integration of 2D Materials and Devices on a Si Platform; 3.1 Introduction; 3.2 Scaling and Integration of MoS2 Transistors; 3.2.1 MoS2 Transistors for Ultimate Scaling and Power Gating; 3.2.2 Designing Complex Circuits with Immature Technologies; 3.3 2D Materials for IR Detectors on a Si Platform; 3.3.1 2D Material for Infrared Detectors 3.3.2 Graphene Thermopiles3.3.3 Heterogeneous Integration of Graphene and Silicon Integrated Circuits for Thermal Imaging Application; 3.4 Heterogeneous Integration of 2D Materials with Si Nanophotonics; 3.4.1 High-Speed Graphene Electro-Optic Modulators; 3.4.2 On-Chip Graphene Photodetectors; 3.5 2DIntro; Foreword; Preface; Contents; 1 Beyond-Silicon Devices: Considerations for Circuits and Architectures; 1.1 Introduction; 1.2 Carbon Nanotube Field-Effect Transistors; 1.3 Circuit-Level Implications; 1.3.1 Overcoming Mis-Positioned CNTs; 1.3.2 Overcoming Metallic CNTs; 1.3.3 CNT-Specific Variations; 1.4 Architectural-Level Implications; 1.5 Outlook; References; 2 Functionality-Enhanced Devices: From Transistors to Circuit-Level Opportunities; 2.1 Introduction; 2.2 Multiple-Independent-Gate Silicon Nanowires Transistors; 2.2.1 Polarity Control; 2.2.2 Subthreshold Slope Control 2.2.3 Threshold Voltage Control2.3 Novel Materials for Polarity-Controllable Devices; 2.3.1 Carbon Nanotubes; 2.3.2 Graphene; 2.3.3 Two-Dimensional Transition Metal Dichalcogenides; 2.4 Circuit-Level Opportunities; 2.5 Summary; References; 3 Heterogeneous Integration of 2D Materials and Devices on a Si Platform; 3.1 Introduction; 3.2 Scaling and Integration of MoS2 Transistors; 3.2.1 MoS2 Transistors for Ultimate Scaling and Power Gating; 3.2.2 Designing Complex Circuits with Immature Technologies; 3.3 2D Materials for IR Detectors on a Si Platform; 3.3.1 2D Material for Infrared Detectors 3.3.2 Graphene Thermopiles3.3.3 Heterogeneous Integration of Graphene and Silicon Integrated Circuits for Thermal Imaging Application; 3.4 Heterogeneous Integration of 2D Materials with Si Nanophotonics; 3.4.1 High-Speed Graphene Electro-Optic Modulators; 3.4.2 On-Chip Graphene Photodetectors; 3.5 2D Material-Based Chemical and Biological Sensors; 3.5.1 Gas and Chemical Sensors; 3.5.2 Biological Sensors; 3.6 Conclusion; References; 4 Emerging NVM Circuit Techniques and Implementations for Energy-Efficient Systems; 4.1 Introduction; 4.1.1 Phase Change Memory Device 4.1.2 Spin-Torque Transfer Memory Device4.1.3 Resistive Memory Device; 4.2 Read Circuits for Emerging Resistive NVM; 4.2.1 Voltage-Mode and Current-Mode Sensing Schemes; 4.2.2 Challenges for Voltage-Mode Sensing Scheme; 4.2.3 Challenges for Current-Mode Sensing Scheme; 4.2.4 Advanced Circuit Design Techniques for VSA and CSA; 4.2.4.1 Low-VDD Swing-Sample-and-Couple VSA (SSC-VSA); 4.2.4.2 Reference Current Generation; 4.2.4.3 Current-Mode Sensing with Small Input-Offsets; 4.2.4.4 Low-Voltage Current-Mode Sensing Schemes; 4.3 Write Circuits for Emerging Resistive NVM 4.3.1 Key Sub-Circuits Used in Write Operations4.3.1.1 Challenges and Advanced Circuits in Level-Shifters; 4.3.1.2 Challenges and Advanced Circuits in Write Drivers; 4.4 Emerging Resistive NVM for Energy-Efficient Systems; 4.4.1 Two-Macro and One-Macro Approaches; 4.4.2 Nonvolatile Logic and Nonvolatile SRAM; 4.4.3 nvSRAM Example: Rnv8T Cell; 4.4.3.1 Rnv8T Cell Basic Operations; 4.4.3.2 Rnv8T Cell Stability; 4.4.3.3 Rnv8T Restore Yield; 4.4.3.4 nvSRAM Design Comparisons; 4.4.4 nvFF Example: SWT1R-nvFF; 4.4.4.1 SWT1R-nvFF Basic Operations; 4.4.4.2 SWT1R-nvFF Performance and Comparison … (more)
- Publisher Details:
- Cham : Springer
- Publication Date:
- 2018
- Extent:
- 1 online resource
- Subjects:
- 621.39/5
Engineering
Metal oxide semiconductors, Complementary
Computer engineering
TECHNOLOGY & ENGINEERING / Mechanical
Computer engineering
Metal oxide semiconductors, Complementary
Technology & Engineering -- Electronics -- Circuits -- General
Computers -- Systems Architecture -- General
Computers -- Logic Design
Circuits & components
Computer architecture & logic design
Systems engineering
Computer science
Logic design
Electronic books - Languages:
- English
- ISBNs:
- 9783319903859
3319903853 - Related ISBNs:
- 9783319903842
3319903845 - Notes:
- Note: Online resource; title from PDF title page (EBSCO, viewed August 23, 2018)
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- Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
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- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library HMNTS - ELD.DS.367659
- Ingest File:
- 01_345.xml