Metal impurities in silicon- and germanium-based technologies : origin, characterization, control, and device impact /: origin, characterization, control, and device impact. (2018)

• Record Type: Book
• Further Information: Note: Cor Claeys, Eddy Simoen.
• Authors: Claeys, Cor L; Simoen, E (Eddy)
• Contents: Intro; Preface; Contents; Abbreviations; Symbols; Greek Symbols; 1 Introduction; References; 2 Basic Properties of Transition Metals in Semiconductors; 2.1 Solid Solubility; 2.2 Diffusivity; 2.2.1 Ion Pairing and Doping Effects; 2.3 Segregation and Precipitation; 2.4 Electrical Properties of Transition Metals; References; 3 Source of Metals in Si and Ge Crystal Growth and Processing; 3.1 Crystal Growth; 3.2 Wet Wafer Cleaning Processes; 3.2.1 Contamination in Si Cleaning Technology; 3.2.2 Contamination in Ge Cleaning Technology; 3.3 Dry Vapor Phase Wafer Cleaning 3.4 Photoresist Deposition and Stripping3.5 Wafer Handling; 3.6 Ion Implantation; 3.7 Thermal Processing; 3.8 Metal Layers in Device Fabrication; 3.8.1 Silicidation and Germanidation; 3.8.2 Metallization; 3.8.3 3D Integration-Through Silicon Vias (TSV); 3.8.4 Ferroelectric Memories; References; 4 Characterization and Detection of Metals in Silicon and Germanium; 4.1 Chemical Analysis of Metals; 4.1.1 Elemental Analysis of Surface Metal Contamination; 4.1.2 Elemental Analysis of Bulk Metal Contamination; 4.1.3 Electron Paramagnetic Resonance; 4.1.4 Mössbauer Spectroscopy 4.2 Structural Analysis4.2.1 Structural Analysis of Metal Precipitates; 4.2.2 Structural Analysis of Metal-Related Point Defects; 4.3 Electrical Analysis; 4.3.1 Theoretical and Practical Considerations for Lifetime Measurements; 4.3.2 Surface Photo Voltage Lifetime Analysis; 4.3.3 PhotoConductance Decay (PCD) and QSS-PC Method; 4.3.4 ELYMAT; 4.3.5 PL Imaging; 4.3.6 Carrier Lifetime by IR Imaging; 4.3.7 Lifetime Mapping of Extended Defects; 4.3.8 MOS Generation Lifetime Techniques; 4.3.9 Deep-Level Transient Spectroscopy; 4.4 Strategy for Metal Contamination Monitoring; References 5 Electrical Activity of Iron and Copper in Si, SiGe and Ge5.1 Iron; 5.1.1 Configurations of Fe; 5.1.1.1 Interstitial and Substitutional Fe; 5.1.1.2 Dopant-Iron Pairs; 5.1.1.3 Small Fe-Related Clusters and Fe-Related Complexes; 5.1.1.4 Fe Precipitation; 5.1.2 Electrical Properties of Fe; 5.1.2.1 Fei and FeA Pairs in Silicon; 5.1.2.2 Fe-Related Point Defects in Si and Ge; 5.1.2.3 Fe-Related Clusters and Precipitates; 5.1.2.4 Fe Activation of Extended Defects; 5.1.3 Detection and Identification of Fe in Silicon; 5.2 Copper; 5.2.1 Configurations of Copper; 5.2.1.1 Cu-Related Point Defects 5.2.1.2 Heterogeneous Precipitation of Copper5.2.1.3 Homogeneous Precipitation of Copper; 5.2.1.4 Precipitation Versus Out-Diffusion; 5.2.2 Electrical Activity of Cu; 5.2.2.1 Copper-Related Point Defects; 5.2.2.2 Electrical Activity of Precipitated Copper; 5.2.2.3 Copper Activation and Passivation of Extended Defects; 5.2.3 Detection of Copper; 5.2.3.1 Lifetime-Based Sensitive Copper Detection; 5.2.3.2 Transient Ion Drift Analysis of Copper in Silicon; References; 6 Electrical Properties of Metals in Si and Ge; 6.1 Nickel in Si and Ge; 6.1.1 Ni-related Point Defects and Complexes
• Publisher Details: Cham, Switzerland : Springer
• Publication Date: 2018
• Extent: 1 online resource
• Subjects: 620.1/6; Materials science; Metals -- Inclusions; Semiconductors -- Materials; TECHNOLOGY & ENGINEERING / Engineering (General); TECHNOLOGY & ENGINEERING / Reference; Metals -- Inclusions; Semiconductors -- Materials; Optical and Electronic Materials; Microwaves, RF and Optical Engineering; Semiconductors; Electronic Circuits and Devices; Characterization and Evaluation of Materials; Technology & Engineering -- Microwaves; Technology & Engineering -- Electronics -- Semiconductors; Technology & Engineering -- Electronics -- Circuits -- General; Technology & Engineering -- Material Science; Microwave technology; Semi-conductors & super-conductors; Circuits & components; Testing of materials; Optical materials; Microwaves; Surfaces (Physics); Electronic devices & materials; Electronic books
• Languages: English
• ISBNs: 9783319939254; 3319939254
• Related ISBNs: 9783319939247; 3319939246
• Notes: Note: Includes bibliographical references and index.; Note: Online resource; title from PDF title page (SpringerLink, viewed August 20, 2018).
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.