Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses. ([2018])

• Record Type: Book
• Further Information: Note: Tae-Ho Lee.
• Authors: Yi, Tʿae-ho
• Contents: Intro; Supervisor's Foreword; Abstract; Parts of this thesis have been published in the following articles:; Acknowledgements; Contents; List of Figures; List of Tables; 1 Introduction; References; 2 Literature Survey; 2.1 Lead-Free Piezoelectric Ceramics; 2.1.1 KN-Based Thin Films; 2.1.1.1 Necessity of KN-Based Thin Films; 2.1.1.2 Technological Requirement for KN-Based Thin Films; 2.1.2 Electrical Properties of KN Thin Film; 2.1.2.1 Capacitance Density; 2.1.2.2 Dielectric Loss; 2.1.2.3 Leakage Current Density; 2.1.2.4 Leakage Current Mechanism; 2.1.2.5 Piezoelectric Coefficient d33 2.2 Memristor-Based Neuromorphic System2.2.1 Limits of Conventional Digital Computation; 2.2.2 Neuromorphic Computing; 2.2.2.1 Artificial Neural Networks; 2.2.2.2 Basic Principle; 2.2.2.3 Neuromorphic Computation Using VLSI (Very-Large-Scale Integration); 2.2.3 Human Brain; 2.2.3.1 Neurons; 2.2.3.2 Synapses; 2.2.3.3 Synaptic Plasticity; 2.2.3.4 Synaptic Metaplasticity; 2.3 Memristor as Artificial Synapses; 2.3.1 Memristor; 2.3.1.1 Definition; 2.3.1.2 Memristor Types; 2.3.1.3 ReRAM-Based Memristor; 2.3.2 Memristor Based Neural Networks; 2.4 Piezoelectric Nanogenerators 2.4.1 Piezoelectric Energy Harvesting2.4.2 Piezoelectric Nanogenerator; References; 3 Experimental Procedure; 3.1 Preparation of KN Sputtering Target; 3.1.1 Synthesis of KN Compound; 3.1.2 Sintering of KN Ceramic Target; 3.2 Experiments of KN Thin Films; 3.2.1 Growth of KN Films; 3.2.2 Analysis of Structural and Electrical Properties of KN Thin Films; 3.2.2.1 Crystal and Microstructure and Surface Morphology; 3.2.2.2 Dielectric Properties; 3.2.2.3 I-V Characteristics; 3.2.2.4 P-E Hysteresis Curve and Piezoelectric Constant d33; 3.3 KNbO3 ReRAM Devices 3.3.1 Fabrication Pt/KN/TiN/SiO2/Si Devices3.3.2 Device Measurements; 3.3.2.1 Structural Characteristics; 3.3.2.2 Electrical Characteristics; Spike-Timing Dependent Plasticity Characteristics (STDP); 3.4 KNbO3 Piezoelectric Nanogenerators; 3.4.1 Fabrication of KN Piezoelectric Nanogenerators; 3.4.2 Device Measurements; 3.5 Biocompatibility Assessment of KN Film; Reference; 4 Results and Discussion; 4.1 Growth Behavior of KN Thin Films; 4.1.1 X-Ray Diffraction Patterns; 4.1.2 SEM/EDX Analysis and Auger Depth Profile; 4.1.3 Electrical Properties of KN Thin Films 4.1.3.1 Dielectric Properties and I-V Characteristic of KN Thin Films4.1.3.2 Polarization Characteristic and d33 Values of KN Thin Films; 4.2 KNbO3-Based ReRAM Devices; 4.2.1 KNbO3/TiN/SiO2/Si ReRAM Devices; 4.2.1.1 Structural Properties of KN Films; 4.2.1.2 Structural and Chemical Analysis on the Surface of the KN Films; 4.2.1.3 Nanocrystal of KN Films; 4.2.1.4 Resistive Switching and Reliability Characteristics of KN Films; 4.2.1.5 Dielectric and Piezoelectric Properties; 4.2.2 Current Conduction Mechanisms; 4.2.2.1 Variations of the RHRS and RLRS with the Size of the ReRAM Device
• Publisher Details: Singapore : Springer
• Publication Date: 2018
• Copyright Date: 2018
• Extent: 1 online resource
• Subjects: 621.3815/2; Materials science; Thin films -- Electric properties; Thin film devices; Crystal growth; Random access memory; TECHNOLOGY & ENGINEERING / Mechanical; Science -- Solid State Physics; Technology & Engineering -- Electronics -- Circuits -- General; Condensed matter physics (liquid state & solid state physics); Circuits & components; Surfaces (Physics); Systems engineering; Technology & Engineering -- Material Science; Materials science; Electronic books
• Languages: English
• ISBNs: 9789811325359; 9811325359
• Related ISBNs: 9789811325342
• Notes: Note: Includes bibliographical references.; Note: Online resource; title from PDF title page (EBSCO, viewed September 19, 2018).
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.