Emerging resistive switching memories. (2016)

• Record Type: Book
• Further Information: Note: Jianyong Ouyang.
• Authors: Ouyang, Jianyong
• Contents: Introduction to history of memory devices and the present memory devices -- Introduction of resistive switches memory devices with nanoparticles -- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode -- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode -- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles -- Mechanisms for resistive switches -- Application of the resistive switching devices with nanoparticles.
• Publisher Details: Switzerland : Springer
• Publication Date: 2016
• Extent: 1 online resource (viii, 93 pages), illustrations (some color)
• Subjects: 621.39/73; Materials science; Nonvolatile random-access memory; TECHNOLOGY & ENGINEERING -- Mechanical; Nonvolatile random-access memory; Technology & Engineering -- Electronics -- Circuits -- General; Technology & Engineering -- Electronics -- General; Computers -- Hardware -- General; Circuits & components; Electronics engineering; Storage media & peripherals; Nanotechnology; Electronics; Memory management (Computer science); Technology & Engineering -- Nanotechnology & MEMS; Nanotechnology; Electronic books
• Languages: English
• ISBNs: 9783319315720; 3319315722; 3319315706; 9783319315706
• Related ISBNs: 9783319315706
• Notes: Note: Includes bibliographical references.; Note: Online resource; title from PDF title page (SpringerLink, viewed July 15, 2016).
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.