The MOCVD Challenge : Volume 2: A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications /: Volume 2: A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications. (1995)

• Record Type: Book
• Further Information: Note: Manijeh Razeghi.
• Authors: Razeghi, Manijeh
• Contents: Cover; Half Title; Title Page; Copyright Page; Dedication; Table of Contents; Preface; Foreword; Introduction; 1 Introduction to Semiconductor Compounds; 1.1 Ill-Y semiconductor alloys; 1.2 Ill-Y semiconductor devices; 1.3 Technology of multilayer growth; References; 2 MOCYD Growth Technique; 2.1 MOCVD growth systems; 2.2 The MOCVD growth mechanism and growth process; 2.3 Gas flow patterns and reactor design; 2.4 MOCVD starting materials; 2.5 Low-pressure MOCVD and MOMBE; References; 3 In situ Characterization during MOCVD; 3.1 Introduction; 3.2 Reflectance anisotropy and ellipsometry 3.3 Optimization of the growth of Ill-Y binaries by RDS3.4 RDS investigation of Ill-Y lattice-matched heterojunctions; 3.5 RDS investigation of Ill-Y lattice-mismatched structures; 3.6 Insights on the growth process, ; References; 4 Ex situ Characterization Techniques; 4.1 Chemical bevel revelation; 4.2 Deep-level transient spectroscopy; 4.3 X-ray diffraction; 4.4 Photoluminescence; 4.5 Electrochemical capacitance-voltage and photovoltage spectroscopy; 4.6 Resistivity and Hall measurement; 4.7 Thickness measurement; References; 5 MOCVD Growth of GaAs Layers; 5.1 Introduction 5.2 GaAs and related compounds band structure5.3 MOCVD growth mechanism of GaAs and related compounds; 5.4 Experimental details; 5.5 Incorporation of impurities in GaAs grown by MOCVD; References; 6 Growth and Characterization of the GalnP-GaAs System; 6.1 Introduction; 6.2 Growth details; 6.3 Structural order in Gaxlnt-xP alloys grown by MOCVD; 6.4 Defects in GalnP layers grown by MOCVD; 6.5 Doping behaviour of GalnP; 6.6 GaAs‒GalnP heterostructures; 6.7 Growth and characterization of GalnP‒GaAs multilayers by MOCVD 6.8 Optical and structural investigations of GaAs‒GalnP quantum wells and superlattices grown by MOCVD6.9 Characterization of GaAs‒GalnP quantum wells by Auger analysis on chemical bevels; 6.10 Evaluation of the band offsets of GaAs/GalnP multilayers by electroreflectance (Razeghi et al 1992); 6.11 Intersubband hole absorption in GaAs -- GalnP quantum wells; References; 7 Optical Devices; 7.1 Electro-optical Modulators; 7.2 GaAs-based infrared photodetectors grown by MOCVD; 7.3 Solar cells and GaAs solar cells; References; 8 GaAs-based Lasers; 8.1 Introduction; 8.2 Basic physical concepts 8.3 Laser structures8.4 New GaAs-based materials for lasers; References; 9 GaAs-based heterojunction electron devices grown by MOCVD; 9.1 Introduction; 9.2 Heterostructure field-effect transistors (HFETs); 9.3 Heterojunction bipolar transistors (HBTs); References; 10 Optoelectronic Integrated Circuits (OEICs); 10.1 Introduction; 10.4 The role of optoelectronic integration in computing; 10.5 Examples of optoelectronic integration by MOCVD; References; Appendices; A Effect of Substrate Miscut on the Measured Superlattice Period
• Publisher Details: Boca Raton, FL : CRC Press
• Publication Date: 1995
• Extent: 1 online resource
• Subjects: 671.732; Optoelectronics; Electromagnetism; Microwaves; Optics; Electromagnetism; Microwaves; Optics; Optoelectronics; Electronic books
• Languages: English
• ISBNs: 9781482289381; 1482289385
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.