Microscopy of Semiconducting Materials : 1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK /: 1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK. (2000)
- Record Type:
- Book
- Title:
- Microscopy of Semiconducting Materials : 1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK /: 1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK. (2000)
- Main Title:
- Microscopy of Semiconducting Materials : 1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK
- Further Information:
- Note: Editors, A.G Cullis, R Beanland.
- Editors:
- Cullis, A. G
Beanland, R - Contents:
- Cover; Half Title; Title Page; Copyright Page; Contents; Preface; High resolution microscopy and microanalysis; Advances in high resolution imaging and microanalysis of Si, GaAs and GaN; Atomic resolution microscopy of semiconductor defects and interfaces; Impact of strain relaxation induced local crystal tilts on the quantitative evaluation of microstructure by high-resolution transmission electron microscopy; Strain mapping in semiconductor heterostructures using HREM PEELS imaging and linescan study of concentration anisotropies in AlxGaj_xAs and InyGa1-yAs heterostructures grown on nonplanar substratesAnalytical electron microscopy of III-V quantum dot structures; Elemental mapping of semiconductor devices using energy-filtering transmission electron microscopy; Atomic reorganisation studies from HRTEM images; The modified structure of amorphous Ge near Si(111) substrates; Measurements of local lattice strains in self-assembled InAs quantum dots: A high resolution transmission electron microscopy study; Dislocations and boundaries The atomic structure ofdislocations and planar boundaries in GaNOn deformation and fracture of semiconductors; Dislocation bundles in GaAs substrates assessed by x-ray and Makyoh topography, x-ray diffraction, TEM, scanning infrared polariscopy, light interferometry, and Nomarski microscopy; Transmission electron microscopy investigations of the defect formation during Zn-diffusion in GaP and GaSb; A study of defects in LEC GaAs after copperCover; Half Title; Title Page; Copyright Page; Contents; Preface; High resolution microscopy and microanalysis; Advances in high resolution imaging and microanalysis of Si, GaAs and GaN; Atomic resolution microscopy of semiconductor defects and interfaces; Impact of strain relaxation induced local crystal tilts on the quantitative evaluation of microstructure by high-resolution transmission electron microscopy; Strain mapping in semiconductor heterostructures using HREM PEELS imaging and linescan study of concentration anisotropies in AlxGaj_xAs and InyGa1-yAs heterostructures grown on nonplanar substratesAnalytical electron microscopy of III-V quantum dot structures; Elemental mapping of semiconductor devices using energy-filtering transmission electron microscopy; Atomic reorganisation studies from HRTEM images; The modified structure of amorphous Ge near Si(111) substrates; Measurements of local lattice strains in self-assembled InAs quantum dots: A high resolution transmission electron microscopy study; Dislocations and boundaries The atomic structure ofdislocations and planar boundaries in GaNOn deformation and fracture of semiconductors; Dislocation bundles in GaAs substrates assessed by x-ray and Makyoh topography, x-ray diffraction, TEM, scanning infrared polariscopy, light interferometry, and Nomarski microscopy; Transmission electron microscopy investigations of the defect formation during Zn-diffusion in GaP and GaSb; A study of defects in LEC GaAs after copper diffusion; Micropipes in SiC represent Frank's hollow dislocations; Planar, linear and point defects in high purity CVD diamond Electrically active grain boundaries in GaPFormation of microcracks in an annealed cubic boron nitride; Self-organized and quantum domain structures; Growth phenomena of quantum dot structures in the InGaAs system; Real time observations of the growth and development of self-assembled GeSi islands on Si(001); Size and shape engineering of vertically-stacked InAs quantum dots; Effect of growth rate on the morphology and composition of InAs quantum dots grown on GaAs by MBE; Investigation of CdSe/ZnSe quantum dot structures by composition evaluation by lattice fringe analysis Application of spatially resolved electron energy-loss spectroscopy to the quantitative analysis of semiconducting layer structuresMorphological instability of strained-layer superlattices grown on vicinal substrates; Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL; TEM characterisation of free standing GaInP Stranski-Krastanow islands grown by MOVPE on GaP substrates; Impact of surface morphology on InAs(P) island formation on InP; Computer-aided analysis of TEM micrographs of CdSc quantum dots on ZnSe … (more)
- Publisher Details:
- Boca Raton, FL : CRC Press
- Publication Date:
- 2000
- Extent:
- 1 online resource
- Subjects:
- 537.6/22
Electronics
Electromagnetism
Microwaves
Optoelectronics
Electromagnetism
Electronics
Microwaves
Optoelectronics
Electronic books - Languages:
- English
- ISBNs:
- 9781482268690
1482268698 - Access Rights:
- Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
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