Silicon heterostructure handbook : materials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy /: materials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy. ([2005])

• Record Type: Book
• Further Information: Note: Edited by John D. Cressler.
• Other Names: Cressler, John D
• Contents: Front cover; Preface; Foreword; The Editor; Table of Contents; Chapter 1. Introduction; Chapter 2. SiGe and Si Strained-Layer Epitaxy; Chapter 3. Fabrication of SiGe HBT BiCMOS Technology; Chapter 4. SiGe HBTs; Chapter 5. Heterosstructure FETs; Chapter 6. Other Heterostructure Devices; Chapter 7. Optoelectronic Components; Chapter 8. Measurement and Modeling; Chapter 9. Circuits and Applications; Appendices; A.1. Properties of Silicon and Germanium; A.2. The Generalized Moll-Ross Relations; A.3. Integral Charge-Control Relations; A.4. Sample SiGe HBT Compact Model Parameters; Index.
• Publisher Details: Boca Raton, FL : CRC Taylor & Francis
• Publication Date: 2005
• Extent: 1 online resource (various pagings), illustrations
• Subjects: 621.3815/28; Bipolar transistors -- Handbooks, manuals, etc; Silicon -- Handbooks, manuals, etc; TECHNOLOGY & ENGINEERING -- Electronics -- Transistors; Bipolar transistors; Silicon; Electronic books; Handbooks and manuals
• Languages: English
• ISBNs: 0849335590; 9780849335594; 9781420026580; 1420026585
• Notes: Note: Includes bibliographical references and index.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.