Conductive atomic force microscopy : applications in nanomaterials /: applications in nanomaterials. (2017)

• Record Type: Book
• Further Information: Note: Edited by Mario Lanza.
• Editors: Lanza, Mario
• Contents: Oxide Films and Conduction AFM xi List of Contributors xv 1 History and Status of the CAFM 1 ; Chengbin Pan, Yuanyuan Shi, Fei Hui, Enric Grustan-Gutierrez, and Mario Lanza 1.1 The Atomic Force Microscope 1 1.2 The Conductive Atomic Force Microscope 4 1.3 History and Status of the CAFM 9 1.4 Editor’s Choice: On the Use of CAFM to Study Nanogenerators Based on Nanowires 16 1.5 Conclusions 20 References 20 2 Fabrication and Reliability of Conductive AFM Probes 29 ; Oliver Krause 2.1 Introduction 29 2.2 Manufacturing of Conductive AFM Probes 30 2.2.1 Thin Film Cantilever 30 2.2.2 Corner Tips 30 2.2.3 Etched Silicon Probes 31 2.2.4 Coating of Probes 32 2.2.5 ConductiveThin Film Probes 34 2.2.6 Material Conversion 35 2.3 How to Choose Your C-AFM Tip 36 2.3.1 Cantilever Choice 36 2.3.2 Tip Material Choice 36 2.3.3 Resolution of C-AFM Tips 37 2.4 TipWear and Sample Damage: Applicable Forces and Currents in C-AFM 38 2.4.1 TipWear: MechanicalWear – Varying Forces 38 2.4.2 TipWear: MechanicalWear – Different Materials 39 2.4.3 TipWear: ElectricalWear 39 2.4.4 Tip Damage by Excess Voltage/High Currents 40 2.4.5 Damaging the Sample Surface 42 2.5 Conclusions 43 References 43 3 Fundamentals of CAFM Operation Modes 45 ; Guenther Benstetter, Alexander Hofer, Donping Liu, Werner Frammelsberger, and Mario Lanza 3.1 Introduction 45 3.2 Tip-Sample Interaction: Contact Area, Effective Emission Area, and Conduction Mechanisms 47 3.2.1 CAFM Tip on Metallic Surfaces 49 3.2.2 CAFM Tip on Semiconducting Surfaces 50 3.2.3 CAFM Tip on Insulating Surfaces 52 3.3 Work Function Difference and Offset Voltage 56 3.4 Operation Modes 60 3.4.1 Contact Mode 61 3.4.2 PeakForce Mode 62 3.4.3 Torsional Resonance Mode 63 3.5 Case Studies 64 3.5.1 Defects in SiC after Plasma Exposure in Fusion Reactors 64 3.5.2 Electrical Conductivity of Dislocations in GaN 67 3.5.3 Microstructure and Local Electrical Conductivity of Laser-Sintered Nanoparticles 69 3.6 Conclusion and Future Perspectives 70 Acknowledgment 70 References 71 4 Investigation of High-k Dielectric Stacks by C-AFM: Advantages, Limitations, and Possible Applications 79 ; Mathias Rommel and Albena Paskaleva 4.1 Introduction 79 4.2 Comparison BetweenMacroscopic I–V Measurements and C-AFM 81 4.3 Influence of Displacement Currents on the Sensitivity of C-AFM Measurements 85 4.4 Applications of C-AFM 89 4.4.1 Morphology ofThin Dielectric Films 89 4.4.2 Assessment of the Interfacial SiO2 Thickness 94 4.4.3 Trapping Phenomena and DegradationMechanism in High-k Dielectric Stacks 98 4.4.4 Reliability of High-k Dielectric Films 104 4.4.4.1 Gate Oxide Reliability at the Nanoscale 104 4.4.4.2 In-Depth Analysis of Bimodal TDDB Distributions 109 4.5 Conclusion 112 References 113 5 Characterization of Grain Boundaries in Polycrystalline HfO2 Dielectrics 119 ; Shubhakar Kalya, Sean Joseph O ’ Shea, and Kin Leong Pey 5.1 Introduction 119 5.2 Experimental Details and Sample Specifications 120 5.3 Formation of Grain Boundaries and Its Local Electrical Properties in HfO2 Dielectric 120 5.4 RVS and CVS Stressing of HfO2/SiOx Dielectric Stack 124 5.5 Uniform Stressing with Successive Scanning in CAFM Mode 126 5.6 Conclusions 130 References 130 6 CAFM Studies on Individual GeSi Quantum Dots and Quantum Rings 133 ; RongWu, Shengli Zhang, Yi Lv, Fei Xue, Yifei Zhang, and Xinju Yang 6.1 Introduction 133 6.2 Conductive Properties of Individual GeSi QDs and QRs 134 6.2.1 Conductive Property Studies on Individual GeSi QDs 135 6.2.1.1 Growth Temperature Dependence 135 6.2.1.2 Electrical Property Changing with the Capping of Si Layer 137 6.2.2 The Conductive Mechanism of GeSi QRs 140 6.3 Modulating the Conductive Properties of GeSi QDs 144 6.3.1 Oxidation and Normal Force 144 6.3.2 Bias Voltage 146 6.3.3 Inter-Dot Coupling 149 6.4 SimultaneousMeasurements of Composition and Current Distributions of GeSi QRs 152 6.5 Conclusions 157 References 157 7 Conductive Atomic ForceMicroscopy of Two-Dimensional Electron Systems: FromAlGaN/GaN Heterostructures to Graphene and MoS2 163 ; Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, and Fabrizio Roccaforte 7.1 Introduction 163 7.2 Nanoscale Electrical Characterization of AlGaN/GaN Heterostructures 164 7.2.1 Contacts to AlGaN/GaN Heterostructures 165 7.2.2 Electrical Nanocharacterization of AlGaN Surface Passivated by a RapidThermal Oxidation 168 7.2.3 CAFMon Dielectrics for Gate Insulated AlGaN/GaN Transistors 169 7.3 CAFM Characterization of Graphene and MoS2 171 7.3.1 Local Electrical Properties of Graphene 2DEG 173 7.3.2 Nanoscale Inhomogeneity of the Schottky Barrier and Resistivity in MoS2 175 7.3.3 Graphene Contacts to AlGaN/GaN Heterostructures 178 7.4 Conclusions 181 Acknowledgments 182 References 182 8 Nanoscale Three-Dimensional Characterization with Scalpel SPM 187 ; Umberto Celano andWilfried Vandervorst 8.1 Introduction 187 8.2 SPM Metrology with Depth Information 188 8.3 Scalpel SPM: A Tip-Based Slice-and-ViewMethodology 190 8.3.1 General Description 190 8.3.2 Practical Implementation 193 8.4 Applications 196 8.4.1 Scalpel SPM for 3D Observation of Conductive Filaments in Resistive Memories 196 8.4.2 Mechanisms for Filament Growth 200 8.4.3 Chemical Nature of the Filament 202 8.4.4 Scalpel SPM for Failure Analysis 203 8.5 Conclusions and Outlook 206 References 207 9 Conductive Atomic Force Microscopy for Nanolithography Based on Local Anodic Oxidation 211 ; Matteo Lorenzoni and Francesc P é rez-Murano 9.1 Introduction to AFM Nanolithography 211 9.2 Local Anodic Oxidation 212 9.3 Kinetics of LAO 214 9.4 Measurement of Electrical Current During LAO 217 9.5 Conclusions 219 Acknowledgments 219 References 220 10 Combination of Semiconductor Parameter Analyzer and Conductive Atomic ForceMicroscope for Advanced Nanoelectronic Characterization 225 ; Vanessa Iglesias, Xu Jing, and Mario Lanza 10.1 Introduction 225 10.2 Combination of SPA and CAFM for Local Channel Hot Carrier Degradation Analysis 227 10.3 Combination of CAFMand SPA for Resistive Switching Analyses 230 10.3.1 Device-Level Stress with SPA Followed by CAFM Characterization 230 10.3.2 Direct Connection of SPA to the CAFM 235 10.4 Conclusions 237 References 238 11 Design and Fabrication of a Logarithmic Amplifier for Scanning Probe Microscopes to AllowWide-Range Current Measurements 243 ; Lidia Aguilera and Joan Grifoll-Soriano 11.1 Introduction 243 11.2 Fabrication of a Logarithmic Preamplifier for CAFMS 244 11.2.1 Design 244 11.2.2 Fabrication and Testing 249 11.2.2.1 Printed Circuit Board 249 11.2.2.2 Cleaning 250 11.2.2.3 Decoupling 250 11.2.2.4 Input and Output Isolation 251 11.2.2.5 Unexpected Passive Components in the PCB 251 11.2.3 Implementation in a CAFM and Case Study 255 11.3 Conclusions 260 References 261</p&
• Publisher Details: Weinheim : Wiley-VCH
• Publication Date: 2017
• Extent: 1 online resource (384 pages)
• Subjects: 620/.5; Atomic force microscopy; TECHNOLOGY & ENGINEERING / Engineering (General); TECHNOLOGY & ENGINEERING / Reference; Electronic books
• Languages: English
• ISBNs: 9783527699797; 3527699791
• Related ISBNs: 3527340912; 9783527340910
• Notes: Note: Includes bibliographical references and index.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.