Silicon heterostructure devices. (©2008)

• Record Type: Book
• Further Information: Note: Edited by John D. Cressler.
• Other Names: Cressler, John D
• Contents: Contents ; Introduction ; The Big Picture; J.D. Cressler ; A Brief History of the Field; J.D. Cressler ; SiGe HBTs ; Overview: SiGe HBTs; J.D. Cressler ; Device Physics; J.D. Cressler ; Second-Order Effects; J.D. Cressler ; Low-Frequency Noise; G. Niu ; Broadband Noise; D.R. Greenberg ; Microscopic Noise Simulation; G. Niu ; Linearity; G. Niu ; pnp SiGe HBTs; J.D. Cressler ; Temperature Effects; J.D. Cressler ; Radiation Effects; J.D. Cressler ; Reliability Issues; J.D. Cressler ; Self-Heating and Thermal Effects; J-S. Rieh ; Device-Level Simulation; G. Niu ; SiGe HBT Performance Limits; G. Freeman, A. Stricker, J-S. Rieh, and D.R. Greenberg ; Heterostructure FETs ; Overview: Heterostructure FETs; J.D. Cressler ; Biaxial Strained Si CMOS; K. Rim ; Uniaxial Stressed Si MOSFET; S.E. Thompson ; SiGe-Channel HFETs; S. Banerjee ; Industry Examples at State-of-the-Art: Intel’s 90 nm Logic Technologies; S.E. Thompson ; Other Heterostructure Devices ; Overview: Other Heterostructure Devices; J.D. Cressler ; Resonant Tunneling Devices; S. Tsujino, D. Grützmacher, and U. Gennser ; IMPATT Diodes; E. Kasper and M. Oehme ; Engineered Substrates for Electronic and Optoelectronic Systems; E.A. Fitzgerald ; Self-Assembling Nanostructures in Ge(Si)–Si Heteroepitaxy; R. Hull ; Optoelectronic Components ; Overview: Optoelectronic Components; J.D. Cressler ; Si–SiGe LEDs; K.L. Wang, S. Tong, and H.J. Kim ; Near-Infrared Detectors; L. Colace, G. Masini, and G. Assanto ; Si-Based Photonic Transistors for Integrated Optoelectronics; W.X. Ni and A. Elfving ; Si–SiGe Quantum Cascade Emitters; D.J. Paul ; Appendices ; Properties of Silicon and Germanium; J.D. Cressler ; The Generalized Moll-Ross Relations; J.D. Cressler ; Integral Charge-Control Relations; M. Schröter ; Sample SiGe HBT Compact Model Parameters; R.M. Malladi
• Publisher Details: Boca Raton : CRC Press
• Publication Date: 2008
• Copyright Date: 2008
• Extent: 1 online resource (1 volume (various pagings)), illustrations
• Subjects: 621.3815/28; Bipolar transistors; Heterostructures; Bipolar integrated circuits -- Design and construction; TECHNOLOGY & ENGINEERING -- Electronics -- Transistors; Bipolar integrated circuits -- Design and construction; Bipolar transistors; Heterostructures; Electronic books
• Languages: English
• ISBNs: 1420066900; 9781420066906; 9781420066913; 1420066919
• Notes: Note: Includes bibliographical references.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.