Defects in microelectronic materials and devices. (©2009)

• Record Type: Book
• Further Information: Note: Edited by Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf.
• Other Names: Fleetwood, D. M (Dan M.); Pantelides, Sokrates T; Schrimpf, Ronald Donald
• Contents: Defects in ultra-shallow junctions / Mark E. Law [and others] -- Hydrogen-related defects in silicon, germanium, and silicon-germanium alloys / A.R. Parker, V.P. Markevich, and L. Dobaczewski -- Defects in strained-Si MOSFETs / Yongke Sun and Scott E. Thompson -- The effect of defects on electron transport in nanometer-scale electronic devices: impurities and interface roughness / M.V. Fischetti and S. Jin -- Electrical characterization of defects in gate dielectrics / Dieter K. Schroder -- Dominating defects in the MOS system: P and E centers / Patrick M. Lenahan -- Oxide traps, border traps, and interface traps in SiO / Daniel M. Fleetwood, Sokrates T. Pantelides, and Ronald D. Schrimpf -- From 3D imaging of atoms to macroscopic device properties / S.J. Pennycok [and others] -- Defect energy levels in HfO and related high-k gate oxides / J. Robertson, K. Xiong, and K. Tse -- Spectroscopic studies of electrically active defects in high-K gate dielectrics / Gerald Lucovsky -- Defects in CMOS gate dielectrics / Eric Gerfunkel, Jacob Gavarin, and Gennadi Bersuker -- Negative bias temperature instabilities in high-k gate dielectrics / M. Houssa [and others] -- Defect formation and annihilation in electronic devices and the role of hydrogen / Leonidas Tseteris [and others] -- Toward engineering modeling of negative bias temperature instability / Tibor Grasser, Wolfgang Goes, and Ben Kaczer -- Wear-out and time-dependent dielectric breakdown in silicon oxides / John S. Suehle -- Defects associated with dielectric breakdown in Sio-based gate dielectrics / Jordi Sune and Ernest Y. Wu -- Defects in thin and ultrathin silicon dioxides / Giorgio Cellere, Simone Geradin, and Alessandro Paccagnella -- Structural defects in SiO-Si caused by ion bombardment / Antoine D. Touboul [and others] -- Impact of radiation-induced defects on bipolar device operation / Ronald D. Schrimpf [and others] -- Silicon dioxide-silicon carbide interfaces: current status and recent advances / S. Dhar [and others] -- Defects in SiC / E. Janzen [and others] -- Defects in gallium arsenide / J.C. Bourgoin and J.J. von Bardeleben -- Appendix: Selected high-impact journal articles on defects in microelectronic materials and devices.
• Publisher Details: Boca Raton : CRC Press
• Publication Date: 2009
• Copyright Date: 2009
• Extent: 1 online resource (1 volume (various pagings)), illustrations
• Subjects: 621.381; Microelectronics -- Materials -- Testing; Metal oxide semiconductor field-effect transistors -- Testing; Integrated circuits -- Defects; TECHNOLOGY & ENGINEERING -- Electronics -- Microelectronics; TECHNOLOGY & ENGINEERING -- Electronics -- Digital; Integrated circuits -- Defects; Metal oxide semiconductor field-effect transistors -- Testing; Microelectronics -- Materials -- Testing; Mikroelektronik; Integrerade kretsar; Electronic books
• Languages: English
• ISBNs: 9781420043761; 1420043765; 9781420043778; 1420043773
• Notes: Note: Includes bibliographical references.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.