Resistive switching : from fundamentals of nanionic redox processes to memristive device applications /: from fundamentals of nanionic redox processes to memristive device applications. ([2016])

• Record Type: Book
• Further Information: Note: Edited by Daniele Ielmini and Rainer Waser.
• Editors: Ielmini, Daniele; Waser, Rainer
• Contents: INTRODUCTION; ; TRANSITION METAL OXIDES; Atomic Structures of Selected Binary, Ternary Oxides; Deposition Techniques; Thermodynamics of Oxidation, Ellingham Diagram; Electronic Structure and Conduction; Correlated Electrons; Ionic Conduction; ; RESISTIVE SWITCHING; Device Structure; Unipolar Switching: Forming, Set/Reset Operations; Bipolar Switching: Forming, Set/Reset Operations; Coexistence of Unipolar/Bipolar Switching; Filamentary Switching and Atomic Force Microscopy Analysis; Interface Switching; Threshold and Memory Switching; Time Dependence of Set/Reset; Resistance Dependence of Set/Reset; ; SWITCHING MECHANISMS AND MODELS; Unipolar Switching: Set/Reset Mechanisms and Models; Bipolar Switching: Set/Reset Mechanisms and Models; Modeling of Resistance Dependence (Filament Size and Gap); Modeling of Time Dependence; Modeling of Set Current Dependence; Overshoot and Parasitic Effects; Material Dependence and Universal Switching; ; MEMORY RELIABILITY; Read Disturb and The Time-Voltage Dilemma; Data Retention; 1/f and Random Telegraph Signal Noise; Switching Variability and Set/Reset Algorithms; Reset Current Reduction; Set/Reset Instability; Cycling Endurance; ; MEMORY CELL STRUCTURES; MIM Structures; Bilayered Structures; Lighting-Rod Structures; Contact RRAM; Complementary Resistance Switch (CRS); Multilevel Cells; Alternative Materials: OxRRAM, PoRRAM, CBRAM; Bottom-Up Approaches: Nanotubes, Nanowires and Self-Assembly; ; MEMORY ARCHITECTURES; Crossbar Array; Diode Selectors; Transistor Selectors; 1T1R Architectures; CMOL; Scaling Issues (Series Resistance, Programming Cross Talk, 3D Stacking Issues); ; LOGIC GATES; The Memristor; Crossbar Latch; Data Restoration; IMP Function; STDP in Memristor Gates; ; CONCLUSIONS;
• Publisher Details: Weinheim, Germany : Wiley-VCH
• Publication Date: 2016
• Extent: 1 online resource, illustrations
• Subjects: 621.381537; Electric resistors; Switching circuits
• Languages: English
• ISBNs: 9783527680931; 9783527680948; 9783527680900; 9783527680870
• Related ISBNs: 9783527334179
• Notes: Note: Includes bibliographical references and index.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.