Gallium nitride (GaN) : physics, devices, and technology /: physics, devices, and technology. (2015)

• Record Type: Book
• Further Information: Note: Edited by Farid Medjdoub.
• Editors: Medjdoub, Farid
• Contents: GaN High-Voltage Power Devices; Joachim Würfl; AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy; Yvon Cordier; Gallium Nitride Transistors on Large-Diameter Si (111) Substrate; Subramaniam Arulkumaran and Geok Ing Ng; GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications; Keisuke Shinohara; Group III–Nitride Microwave Monolithically Integrated Circuits; Rüdiger Quay; GaN-Based Metal/Insulator/Semiconductor-Type Schottky Hydrogen Sensors; Ching-Ting Lee, Hsin-Ying Lee and Li-Ren Lou; InGaN-Based Solar Cells; Ezgi Dogmus and Farid Medjdoub; III-Nitride Semiconductors: New Infrared Intersubband Technologies; M Beeler and E Monroy; Gallium Nitride–Based Interband Tunnel Junctions; Siddharth Rajan, Sriram Krishnamoorthy and Fatih Akyol; Trapping and Degradation Mechanisms in GaN-Based HEMTs; Matteo Meneghini, Gaudenzio Meneghesso and Enrico Zanoni
• Edition: 1st
• Publisher Details: Boca Raton : CRC Press
• Publication Date: 2015
• Extent: 1 online resource, illustrations (black and white)
• Subjects: 661.0675; Gallium nitride; Electronics -- Materials
• Languages: English
• ISBNs: 9781482220049
• Related ISBNs: 9781482220032
• Notes: Note: Description based on CIP data; item not viewed.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.