Hot carriers in semiconductor nanostructures : physics and applications /: physics and applications. (©1992)
- Record Type:
- Book
- Title:
- Hot carriers in semiconductor nanostructures : physics and applications /: physics and applications. (©1992)
- Main Title:
- Hot carriers in semiconductor nanostructures : physics and applications
- Further Information:
- Note: [edited by] Jagdeep Shah.
- Other Names:
- Shah, J (Jagdeep)
- Contents:
- Front Cover; Hot Carriers In Semiconductor Nanostructures: Physics and Applications; Copyright Page; Table of Contents; Preface; Contributors; Part I: Overview; Chapter I.1. Overview; 1. Introduction; 2. Fundamental Aspects of Quasi-2D Systems; 3. Monte Carlo Simulations; 4. Optical Studies of Hot Carriers in Semiconductor Nanostructures; 5. Transport Studies and Devices; 6. Summary; References; Part II: Fundamental Theory; Chapter II.l. Electron-Phonon Interactions in 2D Systems; 1. Introduction; 2. Quantum Confinement.; 3. The Electron-Phonon Scattering Rate. 4. Model Rates for the Fröhlich Interaction5. Scattering by Acoustic Phonons; 6. Concluding Remarks; References; Chapter II. 2. Quantum Many-Body Aspects of Hot-Carrier Relaxation in Semiconductor Microstructures; 1. Introduction; 2. Energy Relaxation of an Excited Electron Gas; 3. Single-Particle Inelastic Lifetime; 4. Conclusion; Acknowledgments; References; Chapter II. 3. Cooling of Highly Photoexcited Electron-Hole Plasma in Polar Semiconductors and Semiconductor Quantum Wells:A Balance-Equation Approach; 1. Carrier Cooling in Bulk Polar Semiconductors. 2. Carrier Cooling in Quantum-Well Structures3. Summary and Conclusions; References; Chapter II. 4. Tunneling Times in Semiconductor Heterostructures: A Critical Review; 1. Introduction; 2. Phase Time, Dwell Time, Büttiker-Landauer Time, Larmor Times, and Complex Times; 3. Analysis and Domain of Validity of the Proposed Tunneling Times; 4. Experimental Methods forFront Cover; Hot Carriers In Semiconductor Nanostructures: Physics and Applications; Copyright Page; Table of Contents; Preface; Contributors; Part I: Overview; Chapter I.1. Overview; 1. Introduction; 2. Fundamental Aspects of Quasi-2D Systems; 3. Monte Carlo Simulations; 4. Optical Studies of Hot Carriers in Semiconductor Nanostructures; 5. Transport Studies and Devices; 6. Summary; References; Part II: Fundamental Theory; Chapter II.l. Electron-Phonon Interactions in 2D Systems; 1. Introduction; 2. Quantum Confinement.; 3. The Electron-Phonon Scattering Rate. 4. Model Rates for the Fröhlich Interaction5. Scattering by Acoustic Phonons; 6. Concluding Remarks; References; Chapter II. 2. Quantum Many-Body Aspects of Hot-Carrier Relaxation in Semiconductor Microstructures; 1. Introduction; 2. Energy Relaxation of an Excited Electron Gas; 3. Single-Particle Inelastic Lifetime; 4. Conclusion; Acknowledgments; References; Chapter II. 3. Cooling of Highly Photoexcited Electron-Hole Plasma in Polar Semiconductors and Semiconductor Quantum Wells:A Balance-Equation Approach; 1. Carrier Cooling in Bulk Polar Semiconductors. 2. Carrier Cooling in Quantum-Well Structures3. Summary and Conclusions; References; Chapter II. 4. Tunneling Times in Semiconductor Heterostructures: A Critical Review; 1. Introduction; 2. Phase Time, Dwell Time, Büttiker-Landauer Time, Larmor Times, and Complex Times; 3. Analysis and Domain of Validity of the Proposed Tunneling Times; 4. Experimental Methods for Determining Tunneling Times; Acknowledgments; References; Chapter II. 5. Quantum Transport; 1. Introduction; 2. The General Problem and the Various Approaches; 3. Applications; 4. Conclusions; References. Part III: Monte Carlo SimulationsChapter III.l. Hot-Carrier Relaxation in Quasi-2D Systems; 1. Introduction; 2. Scattering in Quasi-2D Systems; 3. Monte Carlo Simulation; 4. Analysis of Experimental Results; 5. Summary and Conclusions; Acknowledgments; References; Chapter III. 2. Monte Carlo Simulation of GaAs-AlxGa1_xAs Field-Effect Transistors; 1. Introduction; 2. Ensemble Monte Carlo Device Model; 3. Nonstationary Transport and Scaling of modfets; 4. Physics of Real-Space Transfer Transistors; 5. Extended Drift-Diffusion Formalism; 6. Conclusions; Acknowledgments; References. Part IV: Optical StudiesChapter IV.l. Ultrafast Luminescence Studies of Carrier Relaxation and Tunneling in Semiconductor Nanostructures; 1. Introduction; 2. Ultrafast Luminescence Studies of Carrier Relaxation; 3. Ultrafast Luminescence Studies of Tunneling in Semiconductor Nanostructures; 4. Summary; Acknowledgments; References; Chapter IV. 2. Optical Studies of Femtosecond Carrier Thermalization in GaAs; 1. Introduction; 2. Experimental Methods; 3. Experimental Results; 4. Theoretical Approaches; 5. Conclusion; Acknowledgments; References. … (more)
- Publisher Details:
- Boston : Academic Press
- Publication Date:
- 1992
- Copyright Date:
- 1992
- Extent:
- 1 online resource (xvi, 508 pages), illustrations
- Subjects:
- 621.381/52
Hot carriers -- Congresses
Semiconductors -- Congresses
Nanostructures -- Congresses
Semiconductors
TECHNOLOGY & ENGINEERING -- Electronics -- Semiconductors
TECHNOLOGY & ENGINEERING -- Electronics -- Solid State
Hot carriers
Nanostructures
Semiconductors
Microstructure (physique)
Monte-Carlo, Méthode de
Porteurs chauds
Semiconducteurs
Nanostructures -- Congrès
Halbleiter
Heißes Elektron
Nanostruktur
Electronic books
Conference papers and proceedings
Kongress - Languages:
- English
- ISBNs:
- 9780080925707
0080925707 - Related ISBNs:
- 0126381402
9780126381405 - Notes:
- Note: Includes bibliographical references and index.
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- Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
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- Physical Locations:
- British Library HMNTS - ELD.DS.30014
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